JPH0571146B2 - - Google Patents
Info
- Publication number
- JPH0571146B2 JPH0571146B2 JP60235735A JP23573585A JPH0571146B2 JP H0571146 B2 JPH0571146 B2 JP H0571146B2 JP 60235735 A JP60235735 A JP 60235735A JP 23573585 A JP23573585 A JP 23573585A JP H0571146 B2 JPH0571146 B2 JP H0571146B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- charge trapping
- diffusion layer
- channel region
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60235735A JPS6294987A (ja) | 1985-10-21 | 1985-10-21 | Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60235735A JPS6294987A (ja) | 1985-10-21 | 1985-10-21 | Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6294987A JPS6294987A (ja) | 1987-05-01 |
| JPH0571146B2 true JPH0571146B2 (https=) | 1993-10-06 |
Family
ID=16990444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60235735A Granted JPS6294987A (ja) | 1985-10-21 | 1985-10-21 | Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6294987A (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0779138B2 (ja) * | 1987-08-31 | 1995-08-23 | 工業技術院長 | 不揮発性半導体メモリ素子 |
| JPH07120720B2 (ja) * | 1987-12-17 | 1995-12-20 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
| US5143860A (en) * | 1987-12-23 | 1992-09-01 | Texas Instruments Incorporated | High density EPROM fabricaiton method having sidewall floating gates |
| JPH07120721B2 (ja) * | 1988-02-19 | 1995-12-20 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
| JPH0723959Y2 (ja) * | 1988-10-20 | 1995-05-31 | 株式会社リコー | 不揮発性半導体メモリ装置 |
| DE69428658T2 (de) * | 1993-11-30 | 2002-06-20 | Kabushiki Kaisha Toshiba, Kawasaki | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung |
| JPH0870054A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2980012B2 (ja) | 1995-10-16 | 1999-11-22 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| JP2910647B2 (ja) * | 1995-12-18 | 1999-06-23 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP3934272B2 (ja) * | 1998-07-13 | 2007-06-20 | 三星電子株式会社 | 不揮発性メモリ装置の製造方法 |
-
1985
- 1985-10-21 JP JP60235735A patent/JPS6294987A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6294987A (ja) | 1987-05-01 |
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