JPS6294987A - Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 - Google Patents

Ｍｉｓ電界効果型半導体装置及びその情報の検出方法

Info

Publication number
JPS6294987A
JPS6294987A JP60235735A JP23573585A JPS6294987A JP S6294987 A JPS6294987 A JP S6294987A JP 60235735 A JP60235735 A JP 60235735A JP 23573585 A JP23573585 A JP 23573585A JP S6294987 A JPS6294987 A JP S6294987A
Authority
JP
Japan
Prior art keywords
insulating film
channel region
gate insulating
charge trapping
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60235735A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571146B2 (https=
Inventor
Yasutaka Yamaguchi
山口　泰孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60235735A priority Critical patent/JPS6294987A/ja
Publication of JPS6294987A publication Critical patent/JPS6294987A/ja
Publication of JPH0571146B2 publication Critical patent/JPH0571146B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP60235735A 1985-10-21 1985-10-21 Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 Granted JPS6294987A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60235735A JPS6294987A (ja) 1985-10-21 1985-10-21 Ｍｉｓ電界効果型半導体装置及びその情報の検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60235735A JPS6294987A (ja) 1985-10-21 1985-10-21 Ｍｉｓ電界効果型半導体装置及びその情報の検出方法

Publications (2)

Publication Number Publication Date
JPS6294987A true JPS6294987A (ja) 1987-05-01
JPH0571146B2 JPH0571146B2 (https=) 1993-10-06

Family

ID=16990444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60235735A Granted JPS6294987A (ja) 1985-10-21 1985-10-21 Ｍｉｓ電界効果型半導体装置及びその情報の検出方法

Country Status (1)

Country Link
JP (1) JPS6294987A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459960A (en) * 1987-08-31 1989-03-07 Agency Ind Science Techn Nonvolatile semiconductor memory element
JPH01161770A (ja) * 1987-12-17 1989-06-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH01212472A (ja) * 1988-02-19 1989-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0258349U (https=) * 1988-10-20 1990-04-26
US5143860A (en) * 1987-12-23 1992-09-01 Texas Instruments Incorporated High density EPROM fabricaiton method having sidewall floating gates
JPH09116033A (ja) * 1995-10-16 1997-05-02 Nec Corp 不揮発性半導体記憶装置
US5844268A (en) * 1993-11-30 1998-12-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5923978A (en) * 1995-12-18 1999-07-13 Nec Corporation Nonvolatile semiconductor memory and methods for manufacturing and using the same
US6111287A (en) * 1994-08-30 2000-08-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device allowing electrical writing and erasing of information and method of manufacturing the same
JP2007096342A (ja) * 1998-07-13 2007-04-12 Samsung Electronics Co Ltd 不揮発性メモリ装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459960A (en) * 1987-08-31 1989-03-07 Agency Ind Science Techn Nonvolatile semiconductor memory element
JPH01161770A (ja) * 1987-12-17 1989-06-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5143860A (en) * 1987-12-23 1992-09-01 Texas Instruments Incorporated High density EPROM fabricaiton method having sidewall floating gates
JPH01212472A (ja) * 1988-02-19 1989-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0258349U (https=) * 1988-10-20 1990-04-26
US5844268A (en) * 1993-11-30 1998-12-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US6111287A (en) * 1994-08-30 2000-08-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device allowing electrical writing and erasing of information and method of manufacturing the same
JPH09116033A (ja) * 1995-10-16 1997-05-02 Nec Corp 不揮発性半導体記憶装置
US6188102B1 (en) 1995-10-16 2001-02-13 Nec Corporation Non-volatile semiconductor memory device having multiple different sized floating gates
KR100295222B1 (ko) * 1995-10-16 2001-09-17 가네꼬 히사시 비-휘발성반도체메모리장치
US5923978A (en) * 1995-12-18 1999-07-13 Nec Corporation Nonvolatile semiconductor memory and methods for manufacturing and using the same
US5929480A (en) * 1995-12-18 1999-07-27 Nec Corporation Nonvolatile semiconductor memory device having first and second floating gates
JP2007096342A (ja) * 1998-07-13 2007-04-12 Samsung Electronics Co Ltd 不揮発性メモリ装置

Also Published As

Publication number Publication date
JPH0571146B2 (https=) 1993-10-06

Similar Documents

Publication Publication Date Title
KR960003398B1 (ko) 소거모드시에 워드선에 부전압을 인가하는 행디코더회로를 갖춘 불휘발성 반도체기억장치
JP5235422B2 (ja) 不揮発性半導体記憶装置
KR930000818B1 (ko) Nand 메모리셀 구조를 갖춘 eeprom
EP1770712A1 (en) Program/erase method for P-channel charge trapping memory device
US4999812A (en) Architecture for a flash erase EEPROM memory
KR20060131704A (ko) 반도체장치
US20020040992A1 (en) Nonvolatile semiconductor memory
KR960016106B1 (ko) 비 휘발성 반도체 메모리 장치
JPS60182162A (ja) 不揮発性半導体メモリ
JPH04278297A (ja) 不揮発性半導体記憶装置
US7436716B2 (en) Nonvolatile memory
JPS6294987A (ja) Ｍｉｓ電界効果型半導体装置及びその情報の検出方法
EP1884956B1 (en) Non-volatile memory device having pass transistors and method of operating the same
US6922357B2 (en) Non-volatile semiconductor memory device
US5303184A (en) Non-volatile semiconductor memory having commonly used source or drain regions of floating gate type transistors
JP2006060030A (ja) 半導体記憶装置
WO2001045161A1 (en) Nonvolatile memory and method of driving nonvolatile memory
US7130221B1 (en) Dual gate multi-bit semiconductor memory
US20230200062A1 (en) Semiconductor device
JP2012043520A (ja) 不揮発性半導体記憶装置及びその駆動方法
KR960011187B1 (ko) 불휘발성 반도체메모리
KR0165468B1 (ko) 반도체 메모리소자 및 그 제조방법 및 그 구동방법
JP4256736B2 (ja) 不揮発性半導体記憶装置及びその消去方法
JPS62219296A (ja) 半導体集積回路装置
JP2005057106A (ja) 不揮発性半導体メモリ装置およびその電荷注入方法