JPH0568863B2 - - Google Patents
Info
- Publication number
- JPH0568863B2 JPH0568863B2 JP1128810A JP12881089A JPH0568863B2 JP H0568863 B2 JPH0568863 B2 JP H0568863B2 JP 1128810 A JP1128810 A JP 1128810A JP 12881089 A JP12881089 A JP 12881089A JP H0568863 B2 JPH0568863 B2 JP H0568863B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- gate
- layer
- region
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1128810A JPH0296378A (ja) | 1989-05-24 | 1989-05-24 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1128810A JPH0296378A (ja) | 1989-05-24 | 1989-05-24 | 半導体集積回路装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2276080A Division JPS56120166A (en) | 1980-02-27 | 1980-02-27 | Semiconductor ic device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0296378A JPH0296378A (ja) | 1990-04-09 |
JPH0568863B2 true JPH0568863B2 (enrdf_load_stackoverflow) | 1993-09-29 |
Family
ID=14993980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1128810A Granted JPH0296378A (ja) | 1989-05-24 | 1989-05-24 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0296378A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5691217A (en) * | 1996-01-03 | 1997-11-25 | Micron Technology, Inc. | Semiconductor processing method of forming a pair of field effect transistors having different thickness gate dielectric layers |
WO2004023385A1 (ja) * | 2002-08-29 | 2004-03-18 | Renesas Technology Corp. | 半導体処理装置及びicカード |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827666B2 (ja) * | 1975-03-12 | 1983-06-10 | 株式会社日立製作所 | ハンドウタイシユウセキカイロ |
JPS53120383A (en) * | 1977-03-30 | 1978-10-20 | Fujitsu Ltd | Production of semiconductor device |
-
1989
- 1989-05-24 JP JP1128810A patent/JPH0296378A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0296378A (ja) | 1990-04-09 |
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