JPH0568708B2 - - Google Patents
Info
- Publication number
- JPH0568708B2 JPH0568708B2 JP59181023A JP18102384A JPH0568708B2 JP H0568708 B2 JPH0568708 B2 JP H0568708B2 JP 59181023 A JP59181023 A JP 59181023A JP 18102384 A JP18102384 A JP 18102384A JP H0568708 B2 JPH0568708 B2 JP H0568708B2
- Authority
- JP
- Japan
- Prior art keywords
- display
- electrode
- selection line
- conductive layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59181023A JPS6159389A (ja) | 1984-08-30 | 1984-08-30 | アクテイブマトリツクス型表示装置用表示電極アレイの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59181023A JPS6159389A (ja) | 1984-08-30 | 1984-08-30 | アクテイブマトリツクス型表示装置用表示電極アレイの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6159389A JPS6159389A (ja) | 1986-03-26 |
| JPH0568708B2 true JPH0568708B2 (ko) | 1993-09-29 |
Family
ID=16093408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59181023A Granted JPS6159389A (ja) | 1984-08-30 | 1984-08-30 | アクテイブマトリツクス型表示装置用表示電極アレイの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6159389A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0830822B2 (ja) * | 1986-05-26 | 1996-03-27 | カシオ計算機株式会社 | アクテイブマトリクス液晶表示装置の製造方法 |
| JPH0535426Y2 (ko) * | 1986-08-08 | 1993-09-08 | ||
| JPS6444419A (en) * | 1987-08-11 | 1989-02-16 | Fujitsu Ltd | Liquid crystal display panel |
| JP2759207B2 (ja) * | 1988-06-16 | 1998-05-28 | カシオ計算機株式会社 | 画素電極と薄膜トランジスタの形成方法 |
| JP4906029B2 (ja) * | 2004-08-20 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
-
1984
- 1984-08-30 JP JP59181023A patent/JPS6159389A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159389A (ja) | 1986-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5828433A (en) | Liquid crystal display device and a method of manufacturing the same | |
| US6878966B2 (en) | Thin-film transistor display devices | |
| US5872021A (en) | Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode | |
| US6927105B2 (en) | Thin film transistor array substrate and manufacturing method thereof | |
| KR100264112B1 (ko) | 액티브 매트릭스 기판 및 그 제조 방법 | |
| EP0372821A2 (en) | Liquid crystal display panel with reduced pixel defects | |
| JPH09265113A (ja) | アクティブマトリクス型液晶表示装置およびその製造方 法 | |
| JPH0814669B2 (ja) | マトリクス型表示装置 | |
| JPH03149525A (ja) | アモルファスシリコン薄膜トランジスタ用の絶縁構造 | |
| JPH1031235A (ja) | 液晶表示装置 | |
| JPH07104312A (ja) | 液晶表示装置の製造方法 | |
| JP3226836B2 (ja) | 液晶表示装置及びその製造方法 | |
| EP0315319B1 (en) | Liquid crystal display device | |
| US4990460A (en) | Fabrication method for thin film field effect transistor array suitable for liquid crystal display | |
| JPH09318975A (ja) | 薄膜電界効果型トランジスタ素子アレイおよびその製造 方法 | |
| US5466620A (en) | Method for fabricating a liquid crystal display device | |
| JPH1048664A (ja) | 液晶表示装置及びその製造方法 | |
| JPH0568708B2 (ko) | ||
| JP3167817B2 (ja) | アクティブマトリックス型液晶表示装置 | |
| JPH0627981B2 (ja) | アクテイブマトリツクス型表示装置用表示電極アレイとその製造方法 | |
| JPH0563026B2 (ko) | ||
| US6462793B1 (en) | Liquid crystal display device and method of fabricating the same | |
| JPH08262491A (ja) | 液晶表示素子およびその製造方法 | |
| JP3265862B2 (ja) | 液晶表示装置とその製造方法 | |
| JP2919369B2 (ja) | 液晶表示装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |