JPH0565055B2 - - Google Patents

Info

Publication number
JPH0565055B2
JPH0565055B2 JP61179532A JP17953286A JPH0565055B2 JP H0565055 B2 JPH0565055 B2 JP H0565055B2 JP 61179532 A JP61179532 A JP 61179532A JP 17953286 A JP17953286 A JP 17953286A JP H0565055 B2 JPH0565055 B2 JP H0565055B2
Authority
JP
Japan
Prior art keywords
film
diffusion prevention
phosphorus
phosphorus diffusion
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61179532A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6334939A (ja
Inventor
Hiroshi Kawashita
Koichi Nakagawa
Ko Shimomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17953286A priority Critical patent/JPS6334939A/ja
Publication of JPS6334939A publication Critical patent/JPS6334939A/ja
Publication of JPH0565055B2 publication Critical patent/JPH0565055B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165Reinforcing structures
    • H01L2224/02166Collar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/03Manufacturing methods
    • H01L2224/034Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/0345Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • H01L2224/05082Two-layer arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/04944th Group
    • H01L2924/04941TiN

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
JP17953286A 1986-07-29 1986-07-29 半導体装置およびその製造方法 Granted JPS6334939A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17953286A JPS6334939A (ja) 1986-07-29 1986-07-29 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17953286A JPS6334939A (ja) 1986-07-29 1986-07-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6334939A JPS6334939A (ja) 1988-02-15
JPH0565055B2 true JPH0565055B2 (enrdf_load_stackoverflow) 1993-09-16

Family

ID=16067398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17953286A Granted JPS6334939A (ja) 1986-07-29 1986-07-29 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6334939A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814018B2 (ja) * 1987-12-14 1996-02-14 アルミニウム カンパニー オブ アメリカ アルミニウム合金の熱処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219741A (ja) * 1982-06-15 1983-12-21 Nippon Gakki Seizo Kk 半導体装置

Also Published As

Publication number Publication date
JPS6334939A (ja) 1988-02-15

Similar Documents

Publication Publication Date Title
JPS6242385B2 (enrdf_load_stackoverflow)
JPS62154778A (ja) モノリシック集積回路の製造方法
US4916397A (en) Semiconductor device with bonding pad
JPS59110122A (ja) 窒化膜を有する半導体集積回路装置
JP2000100816A (ja) 半導体装置
JPS6364057B2 (enrdf_load_stackoverflow)
JPH0565055B2 (enrdf_load_stackoverflow)
JPH05218015A (ja) 半導体装置
JPH0370178A (ja) 半導体装置
JPS6367751A (ja) 半導体装置
US4824801A (en) Method of manufacturing aluminum bonding pad with PSG coating
JP3413653B2 (ja) 半導体装置
JP2681982B2 (ja) 半導体装置
JPS5932895B2 (ja) 半導体装置およびその製造方法
JPS6334938A (ja) 半導体装置
JP2761032B2 (ja) 半導体装置
JPS6367754A (ja) 半導体装置
JPS6160580B2 (enrdf_load_stackoverflow)
JPH0451055B2 (enrdf_load_stackoverflow)
JP2756889B2 (ja) 半導体装置の製造方法
JPH0648696B2 (ja) 半導体装置
JPS6367752A (ja) 半導体装置
JP2945010B2 (ja) 半導体装置
JPS6127177Y2 (enrdf_load_stackoverflow)
JPH02308539A (ja) 半導体装置及びその製造方法