JPH0562472B2 - - Google Patents
Info
- Publication number
- JPH0562472B2 JPH0562472B2 JP57200570A JP20057082A JPH0562472B2 JP H0562472 B2 JPH0562472 B2 JP H0562472B2 JP 57200570 A JP57200570 A JP 57200570A JP 20057082 A JP20057082 A JP 20057082A JP H0562472 B2 JPH0562472 B2 JP H0562472B2
- Authority
- JP
- Japan
- Prior art keywords
- inp
- layer
- diameter
- photodetection layer
- photodetection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57200570A JPS5990964A (ja) | 1982-11-16 | 1982-11-16 | 光検出器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57200570A JPS5990964A (ja) | 1982-11-16 | 1982-11-16 | 光検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5990964A JPS5990964A (ja) | 1984-05-25 |
JPH0562472B2 true JPH0562472B2 (fr) | 1993-09-08 |
Family
ID=16426520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57200570A Granted JPS5990964A (ja) | 1982-11-16 | 1982-11-16 | 光検出器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5990964A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62281374A (ja) * | 1986-05-29 | 1987-12-07 | Omron Tateisi Electronics Co | 半導体装置 |
DE19518303C2 (de) * | 1995-05-18 | 1997-04-10 | Forschungszentrum Juelich Gmbh | Optische Linsen-/Detektoranordnung |
JP6035770B2 (ja) * | 2012-02-20 | 2016-11-30 | 日本電気株式会社 | 半導体受光素子 |
US11145770B2 (en) | 2018-02-01 | 2021-10-12 | Kyoto Semiconductor Co., Ltd. | Semiconductor light receiving element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162284A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Light emitting diode and its manufacturing method |
-
1982
- 1982-11-16 JP JP57200570A patent/JPS5990964A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162284A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Light emitting diode and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPS5990964A (ja) | 1984-05-25 |
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