JPH0559579B2 - - Google Patents

Info

Publication number
JPH0559579B2
JPH0559579B2 JP58165151A JP16515183A JPH0559579B2 JP H0559579 B2 JPH0559579 B2 JP H0559579B2 JP 58165151 A JP58165151 A JP 58165151A JP 16515183 A JP16515183 A JP 16515183A JP H0559579 B2 JPH0559579 B2 JP H0559579B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
insulating film
conductive film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58165151A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6057969A (ja
Inventor
Takashi Saigo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58165151A priority Critical patent/JPS6057969A/ja
Publication of JPS6057969A publication Critical patent/JPS6057969A/ja
Publication of JPH0559579B2 publication Critical patent/JPH0559579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP58165151A 1983-09-09 1983-09-09 半導体装置の製造方法 Granted JPS6057969A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165151A JPS6057969A (ja) 1983-09-09 1983-09-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165151A JPS6057969A (ja) 1983-09-09 1983-09-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6057969A JPS6057969A (ja) 1985-04-03
JPH0559579B2 true JPH0559579B2 (enrdf_load_stackoverflow) 1993-08-31

Family

ID=15806843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165151A Granted JPS6057969A (ja) 1983-09-09 1983-09-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6057969A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724521U (ja) * 1993-10-04 1995-05-09 株式会社レヂトン コンパスアーム切断機

Also Published As

Publication number Publication date
JPS6057969A (ja) 1985-04-03

Similar Documents

Publication Publication Date Title
EP0516338B1 (en) Self aligned polysilicon gate contact
JPH11238884A (ja) 半導体デバイス及びその製造方法
JPH05102179A (ja) 半導体装置及びその製造方法
JP2952570B2 (ja) 半導体デバイスの製造方法
JP2557206B2 (ja) 半導体素子の製造方法
JPH0559579B2 (enrdf_load_stackoverflow)
JPH06268057A (ja) 半導体装置の製造方法
JPH0637106A (ja) 半導体製造装置の製造方法
JPH0666327B2 (ja) Mos型半導体装置およびその製造方法
JPS6025028B2 (ja) 半導体装置の製造方法
JPS6158987B2 (enrdf_load_stackoverflow)
JP3326990B2 (ja) バイポーラトランジスタ及びその製造方法
JPH08213601A (ja) 半導体装置とその製造方法
JPS62120082A (ja) 半導体装置及びその製造方法
JPS6057971A (ja) 半導体装置の製造方法
JP2706162B2 (ja) 半導体装置の製造方法
JPH06163890A (ja) 半導体装置の製造方法
JPS6156448A (ja) 相補型半導体装置の製造方法
KR0165421B1 (ko) 반도체장치의 모스 트랜지스터 제조방법
JP3061892B2 (ja) 半導体装置の製造方法
JPS6057970A (ja) 半導体装置の製造方法
JP3148227B2 (ja) 半導体装置の製造方法
JPH0778979A (ja) 半導体装置の製造方法
JP3848782B2 (ja) 半導体装置の製造方法
JP3363675B2 (ja) 半導体装置の製造方法