JPH0556657B2 - - Google Patents
Info
- Publication number
- JPH0556657B2 JPH0556657B2 JP14238684A JP14238684A JPH0556657B2 JP H0556657 B2 JPH0556657 B2 JP H0556657B2 JP 14238684 A JP14238684 A JP 14238684A JP 14238684 A JP14238684 A JP 14238684A JP H0556657 B2 JPH0556657 B2 JP H0556657B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- type region
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238684A JPS6123353A (ja) | 1984-07-11 | 1984-07-11 | 過電圧保護素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238684A JPS6123353A (ja) | 1984-07-11 | 1984-07-11 | 過電圧保護素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6123353A JPS6123353A (ja) | 1986-01-31 |
| JPH0556657B2 true JPH0556657B2 (fr) | 1993-08-20 |
Family
ID=15314154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14238684A Granted JPS6123353A (ja) | 1984-07-11 | 1984-07-11 | 過電圧保護素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6123353A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766956B2 (ja) * | 1986-08-21 | 1995-07-19 | 三菱電機株式会社 | 半導体集積回路装置の静電破壊防止装置 |
| JPH0766957B2 (ja) * | 1986-12-12 | 1995-07-19 | 三菱電機株式会社 | 半導体集積回路装置の静電破壊防止装置 |
| US5539233A (en) * | 1993-07-22 | 1996-07-23 | Texas Instruments Incorporated | Controlled low collector breakdown voltage vertical transistor for ESD protection circuits |
| WO2013128583A1 (fr) * | 2012-02-28 | 2013-09-06 | 新日本無線株式会社 | Dispositif à semi-conducteurs |
-
1984
- 1984-07-11 JP JP14238684A patent/JPS6123353A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6123353A (ja) | 1986-01-31 |
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