JPH0556283B2 - - Google Patents
Info
- Publication number
- JPH0556283B2 JPH0556283B2 JP62231887A JP23188787A JPH0556283B2 JP H0556283 B2 JPH0556283 B2 JP H0556283B2 JP 62231887 A JP62231887 A JP 62231887A JP 23188787 A JP23188787 A JP 23188787A JP H0556283 B2 JPH0556283 B2 JP H0556283B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- substrate
- oxide superconducting
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 10
- 239000011575 calcium Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 47
- 239000013078 crystal Substances 0.000 description 29
- 229910052760 oxygen Inorganic materials 0.000 description 27
- 239000001301 oxygen Substances 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 239000007789 gas Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000010949 copper Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- 230000005418 spin wave Effects 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910002367 SrTiO Inorganic materials 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- -1 oxygen Chemical compound 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 241001289141 Babr Species 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- KEQVPIDOPAGWCP-UHFFFAOYSA-N ethanolate;yttrium(3+) Chemical compound [Y+3].CC[O-].CC[O-].CC[O-] KEQVPIDOPAGWCP-UHFFFAOYSA-N 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231887A JPS6476903A (en) | 1987-09-16 | 1987-09-16 | Apparatus for producing oxide superconducting material |
| KR1019880011900A KR910007384B1 (ko) | 1987-09-16 | 1988-09-15 | 초전도 산화물 형성방법 및 장치 |
| EP88308627A EP0308266A3 (en) | 1987-09-16 | 1988-09-16 | Method and apparatus for forming superconducting materials |
| CN88107276A CN1016388B (zh) | 1987-09-16 | 1988-09-16 | 形成超导氧化物材料的方法和装置 |
| US07/535,302 US5162296A (en) | 1987-09-16 | 1990-06-08 | Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field |
| US07/882,525 US5262396A (en) | 1987-09-16 | 1992-05-13 | Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231887A JPS6476903A (en) | 1987-09-16 | 1987-09-16 | Apparatus for producing oxide superconducting material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6476903A JPS6476903A (en) | 1989-03-23 |
| JPH0556283B2 true JPH0556283B2 (ko) | 1993-08-19 |
Family
ID=16930587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62231887A Granted JPS6476903A (en) | 1987-09-16 | 1987-09-16 | Apparatus for producing oxide superconducting material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476903A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0880475A (ja) * | 1994-05-14 | 1996-03-26 | Maschimpex Gmbh | 製薬工業、製菓工業等における小形製品を形態及び色に応じて分別する自動分別装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288408A (ja) * | 1988-05-31 | 1990-03-28 | Mitsubishi Metal Corp | 超電導セラミックス膜の製造法 |
| JP6665536B2 (ja) * | 2016-01-12 | 2020-03-13 | 株式会社リコー | 酸化物半導体 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56109824A (en) * | 1980-02-05 | 1981-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide superconductive thin film |
| JPS5963732A (ja) * | 1982-10-04 | 1984-04-11 | Hitachi Ltd | 薄膜形成装置 |
| JPS59219461A (ja) * | 1983-05-24 | 1984-12-10 | Toshiba Corp | アモルフアスシリコン成膜装置 |
| JPS60117711A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 薄膜形成装置 |
| JPS61109036A (ja) * | 1984-11-01 | 1986-05-27 | Canon Inc | テレビレンズの表示装置 |
| JPS61125133A (ja) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | 低温プラズマ電磁界制御機構 |
| JPS61267324A (ja) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | 乾式薄膜加工装置 |
| JPS62150726A (ja) * | 1985-12-24 | 1987-07-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
-
1987
- 1987-09-16 JP JP62231887A patent/JPS6476903A/ja active Granted
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56109824A (en) * | 1980-02-05 | 1981-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide superconductive thin film |
| JPS5963732A (ja) * | 1982-10-04 | 1984-04-11 | Hitachi Ltd | 薄膜形成装置 |
| JPS59219461A (ja) * | 1983-05-24 | 1984-12-10 | Toshiba Corp | アモルフアスシリコン成膜装置 |
| JPS60117711A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 薄膜形成装置 |
| JPS61109036A (ja) * | 1984-11-01 | 1986-05-27 | Canon Inc | テレビレンズの表示装置 |
| JPS61125133A (ja) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | 低温プラズマ電磁界制御機構 |
| JPS61267324A (ja) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | 乾式薄膜加工装置 |
| JPS62150726A (ja) * | 1985-12-24 | 1987-07-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0880475A (ja) * | 1994-05-14 | 1996-03-26 | Maschimpex Gmbh | 製薬工業、製菓工業等における小形製品を形態及び色に応じて分別する自動分別装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6476903A (en) | 1989-03-23 |
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