JPH0556016B2 - - Google Patents

Info

Publication number
JPH0556016B2
JPH0556016B2 JP57223410A JP22341082A JPH0556016B2 JP H0556016 B2 JPH0556016 B2 JP H0556016B2 JP 57223410 A JP57223410 A JP 57223410A JP 22341082 A JP22341082 A JP 22341082A JP H0556016 B2 JPH0556016 B2 JP H0556016B2
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
resist
layer
channel portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57223410A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59113666A (ja
Inventor
Yasuhiro Nasu
Satoru Kawai
Toshiro Kodama
Kenichi Yanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57223410A priority Critical patent/JPS59113666A/ja
Publication of JPS59113666A publication Critical patent/JPS59113666A/ja
Publication of JPH0556016B2 publication Critical patent/JPH0556016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
JP57223410A 1982-12-20 1982-12-20 薄膜トランジスタの製造方法 Granted JPS59113666A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223410A JPS59113666A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223410A JPS59113666A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59113666A JPS59113666A (ja) 1984-06-30
JPH0556016B2 true JPH0556016B2 (en, 2012) 1993-08-18

Family

ID=16797703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223410A Granted JPS59113666A (ja) 1982-12-20 1982-12-20 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59113666A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
DE3680806D1 (de) * 1985-03-29 1991-09-19 Matsushita Electric Ind Co Ltd Duennschicht-transistorenanordnung und methode zu deren herstellung.
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
JPS62291067A (ja) * 1986-06-10 1987-12-17 Nec Corp 薄膜トランジスタの製造方法
JPS644071A (en) * 1987-06-26 1989-01-09 Nippon Telegraph & Telephone Thin film transistor and manufacture thereof
US5493129A (en) * 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652741B2 (ja) * 1982-06-02 1994-07-06 松下電器産業株式会社 絶縁ゲート型トランジスタの製造方法

Also Published As

Publication number Publication date
JPS59113666A (ja) 1984-06-30

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