JPH0548936B2 - - Google Patents
Info
- Publication number
- JPH0548936B2 JPH0548936B2 JP62247175A JP24717587A JPH0548936B2 JP H0548936 B2 JPH0548936 B2 JP H0548936B2 JP 62247175 A JP62247175 A JP 62247175A JP 24717587 A JP24717587 A JP 24717587A JP H0548936 B2 JPH0548936 B2 JP H0548936B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- polycrystalline silicon
- groove
- oxide film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 238000002955 isolation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-AKLPVKDBSA-N silicon-31 atom Chemical compound [31Si] XUIMIQQOPSSXEZ-AKLPVKDBSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62247175A JPS6489365A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
EP88116120A EP0310087B1 (en) | 1987-09-29 | 1988-09-29 | Semiconductor device having bipolar transistor with trench |
US07/250,670 US4963957A (en) | 1987-09-29 | 1988-09-29 | Semiconductor device having bipolar transistor with trench |
DE3889610T DE3889610T2 (de) | 1987-09-29 | 1988-09-29 | Halbleiteranordnung mit einem Trench-Bipolartransistor. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62247175A JPS6489365A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6489365A JPS6489365A (en) | 1989-04-03 |
JPH0548936B2 true JPH0548936B2 (US07935154-20110503-C00018.png) | 1993-07-22 |
Family
ID=17159555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62247175A Granted JPS6489365A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4963957A (US07935154-20110503-C00018.png) |
EP (1) | EP0310087B1 (US07935154-20110503-C00018.png) |
JP (1) | JPS6489365A (US07935154-20110503-C00018.png) |
DE (1) | DE3889610T2 (US07935154-20110503-C00018.png) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8800157A (nl) * | 1988-01-25 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
US5008210A (en) * | 1989-02-07 | 1991-04-16 | Hewlett-Packard Company | Process of making a bipolar transistor with a trench-isolated emitter |
US5109263A (en) * | 1989-07-28 | 1992-04-28 | Hitachi, Ltd. | Semiconductor device with optimal distance between emitter and trench isolation |
JPH04373133A (ja) * | 1991-06-24 | 1992-12-25 | Hitachi Ltd | 半導体装置 |
US5194926A (en) * | 1991-10-03 | 1993-03-16 | Motorola Inc. | Semiconductor device having an inverse-T bipolar transistor |
US5311055A (en) * | 1991-11-22 | 1994-05-10 | The United States Of America As Represented By The Secretary Of The Navy | Trenched bipolar transistor structures |
US5345102A (en) * | 1992-02-28 | 1994-09-06 | Nec Corporation | Bipolar transistor having collector electrode penetrating emitter and base regions |
JP2971246B2 (ja) * | 1992-04-15 | 1999-11-02 | 株式会社東芝 | ヘテロバイポーラトランジスタの製造方法 |
KR960016229B1 (ko) * | 1993-09-13 | 1996-12-07 | 삼성전자 주식회사 | 반도체소자의 콘택구조 및 그 제조방법 |
JPH07106412A (ja) * | 1993-10-07 | 1995-04-21 | Toshiba Corp | 半導体装置およびその製造方法 |
US5426059A (en) * | 1994-05-26 | 1995-06-20 | Queyssac; Daniel G. | Method of making vertically stacked bipolar semiconductor structure |
GB2296377A (en) * | 1994-12-20 | 1996-06-26 | Korea Electronics Telecomm | Pillar bipolar transistors |
KR0171000B1 (ko) * | 1995-12-15 | 1999-02-01 | 양승택 | 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법 |
US5969402A (en) * | 1997-07-18 | 1999-10-19 | Advanced Micro Devices, Inc. | Reduction of depletion spreading sideways utilizing slots |
US5912501A (en) * | 1997-07-18 | 1999-06-15 | Advanced Micro Devices, Inc. | Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots |
JP3466102B2 (ja) * | 1999-03-12 | 2003-11-10 | 沖電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2001244416A (ja) | 2000-02-29 | 2001-09-07 | Hitachi Ltd | 信号処理用半導体集積回路 |
FR2807567A1 (fr) * | 2000-04-10 | 2001-10-12 | St Microelectronics Sa | Procede de realisation d'un transistor bipolaire |
JP4955222B2 (ja) | 2005-05-20 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100818892B1 (ko) * | 2007-03-19 | 2008-04-03 | 동부일렉트로닉스 주식회사 | 바이폴라 트랜지스터 및 그 제조 방법 |
US9673084B2 (en) * | 2014-12-04 | 2017-06-06 | Globalfoundries Singapore Pte. Ltd. | Isolation scheme for high voltage device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1534896A (en) * | 1975-05-19 | 1978-12-06 | Itt | Direct metal contact to buried layer |
JPH06101470B2 (ja) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置 |
JPS60241261A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS61127169A (ja) * | 1984-11-24 | 1986-06-14 | Sony Corp | 半導体装置及びその製造方法 |
JPH0719838B2 (ja) * | 1985-07-19 | 1995-03-06 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US4887144A (en) * | 1985-07-26 | 1989-12-12 | Texas Instruments Incorporated | Topside substrate contact in a trenched semiconductor structure and method of fabrication |
US4764801A (en) * | 1985-10-08 | 1988-08-16 | Motorola Inc. | Poly-sidewall contact transistors |
US4910575A (en) * | 1986-06-16 | 1990-03-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit and its manufacturing method |
-
1987
- 1987-09-29 JP JP62247175A patent/JPS6489365A/ja active Granted
-
1988
- 1988-09-29 DE DE3889610T patent/DE3889610T2/de not_active Expired - Fee Related
- 1988-09-29 EP EP88116120A patent/EP0310087B1/en not_active Expired - Lifetime
- 1988-09-29 US US07/250,670 patent/US4963957A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3889610T2 (de) | 1994-09-01 |
EP0310087B1 (en) | 1994-05-18 |
EP0310087A2 (en) | 1989-04-05 |
JPS6489365A (en) | 1989-04-03 |
EP0310087A3 (en) | 1989-12-13 |
DE3889610D1 (de) | 1994-06-23 |
US4963957A (en) | 1990-10-16 |
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