JPH0547994B2 - - Google Patents
Info
- Publication number
- JPH0547994B2 JPH0547994B2 JP7821883A JP7821883A JPH0547994B2 JP H0547994 B2 JPH0547994 B2 JP H0547994B2 JP 7821883 A JP7821883 A JP 7821883A JP 7821883 A JP7821883 A JP 7821883A JP H0547994 B2 JPH0547994 B2 JP H0547994B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdse
- chromium
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 44
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 37
- 239000011651 chromium Substances 0.000 claims description 36
- 229910052804 chromium Inorganic materials 0.000 claims description 27
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 230000002123 temporal effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7821883A JPS59204273A (ja) | 1983-05-06 | 1983-05-06 | 薄膜トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7821883A JPS59204273A (ja) | 1983-05-06 | 1983-05-06 | 薄膜トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59204273A JPS59204273A (ja) | 1984-11-19 |
| JPH0547994B2 true JPH0547994B2 (fr) | 1993-07-20 |
Family
ID=13655904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7821883A Granted JPS59204273A (ja) | 1983-05-06 | 1983-05-06 | 薄膜トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59204273A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1560691B (zh) * | 1992-08-27 | 2010-05-26 | 株式会社半导体能源研究所 | 半导体器件及其制造方法和有源矩阵显示器 |
| TWI221341B (en) * | 2003-09-18 | 2004-09-21 | Ind Tech Res Inst | Method and material for forming active layer of thin film transistor |
-
1983
- 1983-05-06 JP JP7821883A patent/JPS59204273A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59204273A (ja) | 1984-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60189268A (ja) | 半導体装置 | |
| JPS56125868A (en) | Thin-film semiconductor device | |
| JPS5915388B2 (ja) | 半導体装置 | |
| JPH0158669B2 (fr) | ||
| JPH0650778B2 (ja) | 薄膜トランジスタおよびその製造方法 | |
| JPH0547994B2 (fr) | ||
| JPH0669094B2 (ja) | 電界効果型トランジスタ | |
| JP3008485B2 (ja) | 薄膜トランジスタ | |
| JPH0740607B2 (ja) | 薄膜トランジスタの製造方法 | |
| JP3019650B2 (ja) | フォトセンサ | |
| JPH0212031B2 (fr) | ||
| JPS55146961A (en) | Semiconductor memory device | |
| JP3085376B2 (ja) | 電界効果トランジスタ | |
| JPS631072A (ja) | 薄膜電界効果トランジスタ | |
| JPH07211921A (ja) | 半導体素子の製造方法 | |
| JP3143102B2 (ja) | Ｍｉｓ型トランジスタ | |
| JPH06188272A (ja) | ヘテロ接合電界効果トランジスタ | |
| EP0401356A1 (fr) | Transistor a effet de champ mos de grandeur inferieure au micron et a couche ultrafine avec canal intrinseque | |
| JPS57128070A (en) | Field-effect transistor | |
| JPH0346980B2 (fr) | ||
| JP3246034B2 (ja) | フォトセンサ及びフォトセンサの駆動方法 | |
| JPS59189676A (ja) | 半導体装置 | |
| JPH06310724A (ja) | 薄膜トランジスタ | |
| JPS607776A (ja) | 薄膜トランジスタ | |
| JPS6276565A (ja) | 電界効果型トランジスタ |