JPH0547993B2 - - Google Patents

Info

Publication number
JPH0547993B2
JPH0547993B2 JP57054594A JP5459482A JPH0547993B2 JP H0547993 B2 JPH0547993 B2 JP H0547993B2 JP 57054594 A JP57054594 A JP 57054594A JP 5459482 A JP5459482 A JP 5459482A JP H0547993 B2 JPH0547993 B2 JP H0547993B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
region
semiconductor element
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57054594A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58171864A (ja
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57054594A priority Critical patent/JPS58171864A/ja
Priority to DE8383301696T priority patent/DE3380285D1/de
Priority to EP83301696A priority patent/EP0090624B1/en
Publication of JPS58171864A publication Critical patent/JPS58171864A/ja
Priority to US06/846,486 priority patent/US4665419A/en
Publication of JPH0547993B2 publication Critical patent/JPH0547993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
JP57054594A 1982-03-26 1982-03-31 半導体装置 Granted JPS58171864A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57054594A JPS58171864A (ja) 1982-03-31 1982-03-31 半導体装置
DE8383301696T DE3380285D1 (en) 1982-03-26 1983-03-25 Mos semiconductor device and method of producing the same
EP83301696A EP0090624B1 (en) 1982-03-26 1983-03-25 Mos semiconductor device and method of producing the same
US06/846,486 US4665419A (en) 1982-03-26 1986-04-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57054594A JPS58171864A (ja) 1982-03-31 1982-03-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS58171864A JPS58171864A (ja) 1983-10-08
JPH0547993B2 true JPH0547993B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=12975047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57054594A Granted JPS58171864A (ja) 1982-03-26 1982-03-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS58171864A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5463012B2 (ja) 2007-05-16 2014-04-09 富士フイルム株式会社 膵リパーゼ測定用乾式分析要素の製造方法
JP2008306942A (ja) 2007-06-12 2008-12-25 Fujifilm Corp リパーゼ測定用乾式分析要素
JP5081680B2 (ja) 2008-03-25 2012-11-28 富士フイルム株式会社 リパーゼ測定用乾式分析要素
JP5331531B2 (ja) 2008-03-25 2013-10-30 富士フイルム株式会社 リパーゼ測定用乾式分析要素

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518023A (en) * 1978-07-26 1980-02-07 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
JPS58171864A (ja) 1983-10-08

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