JPH0546706B2 - - Google Patents

Info

Publication number
JPH0546706B2
JPH0546706B2 JP59215155A JP21515584A JPH0546706B2 JP H0546706 B2 JPH0546706 B2 JP H0546706B2 JP 59215155 A JP59215155 A JP 59215155A JP 21515584 A JP21515584 A JP 21515584A JP H0546706 B2 JPH0546706 B2 JP H0546706B2
Authority
JP
Japan
Prior art keywords
gate
oxide film
island
film
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59215155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6194367A (ja
Inventor
Kohei Ebara
Hideyuki Unno
Susumu Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59215155A priority Critical patent/JPS6194367A/ja
Publication of JPS6194367A publication Critical patent/JPS6194367A/ja
Publication of JPH0546706B2 publication Critical patent/JPH0546706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon

Landscapes

  • Element Separation (AREA)
JP59215155A 1984-10-16 1984-10-16 半導体装置及び半導体装置の製造方法 Granted JPS6194367A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59215155A JPS6194367A (ja) 1984-10-16 1984-10-16 半導体装置及び半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59215155A JPS6194367A (ja) 1984-10-16 1984-10-16 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6194367A JPS6194367A (ja) 1986-05-13
JPH0546706B2 true JPH0546706B2 (enrdf_load_stackoverflow) 1993-07-14

Family

ID=16667572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59215155A Granted JPS6194367A (ja) 1984-10-16 1984-10-16 半導体装置及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6194367A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434441A (en) * 1992-01-31 1995-07-18 Canon Kabushiki Kaisha Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness
JP3191061B2 (ja) * 1992-01-31 2001-07-23 キヤノン株式会社 半導体装置及び液晶表示装置
JP2000307112A (ja) 1999-04-26 2000-11-02 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852340B2 (ja) * 1976-07-31 1983-11-22 松下電器産業株式会社 半導体装置の製造方法
JPS57113252A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Manufacture of semiconductor device
JPS57167677A (en) * 1981-03-31 1982-10-15 Fujitsu Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6194367A (ja) 1986-05-13

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term