JPH0451977B2 - - Google Patents

Info

Publication number
JPH0451977B2
JPH0451977B2 JP58146299A JP14629983A JPH0451977B2 JP H0451977 B2 JPH0451977 B2 JP H0451977B2 JP 58146299 A JP58146299 A JP 58146299A JP 14629983 A JP14629983 A JP 14629983A JP H0451977 B2 JPH0451977 B2 JP H0451977B2
Authority
JP
Japan
Prior art keywords
silicon layer
nitride film
photoresist
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58146299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6038830A (ja
Inventor
Tetsuro Yanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP14629983A priority Critical patent/JPS6038830A/ja
Publication of JPS6038830A publication Critical patent/JPS6038830A/ja
Publication of JPH0451977B2 publication Critical patent/JPH0451977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP14629983A 1983-08-12 1983-08-12 半導体装置の製造方法 Granted JPS6038830A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14629983A JPS6038830A (ja) 1983-08-12 1983-08-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14629983A JPS6038830A (ja) 1983-08-12 1983-08-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6038830A JPS6038830A (ja) 1985-02-28
JPH0451977B2 true JPH0451977B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=15404534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14629983A Granted JPS6038830A (ja) 1983-08-12 1983-08-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6038830A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391081A3 (en) * 1989-04-06 1991-08-07 International Business Machines Corporation Fabrication and structure of semiconductor-on-insulator islands

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831552A (ja) * 1981-08-18 1983-02-24 Seiko Epson Corp 半導体装置の製造方法
JPS5861641A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6038830A (ja) 1985-02-28

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