JPH0546095B2 - - Google Patents

Info

Publication number
JPH0546095B2
JPH0546095B2 JP58021423A JP2142383A JPH0546095B2 JP H0546095 B2 JPH0546095 B2 JP H0546095B2 JP 58021423 A JP58021423 A JP 58021423A JP 2142383 A JP2142383 A JP 2142383A JP H0546095 B2 JPH0546095 B2 JP H0546095B2
Authority
JP
Japan
Prior art keywords
etching
image signal
pattern
circuit
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58021423A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59147433A (ja
Inventor
Tooru Ootsubo
Susumu Aiuchi
Takashi Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58021423A priority Critical patent/JPS59147433A/ja
Priority to EP84101441A priority patent/EP0119455B1/en
Priority to DE8484101441T priority patent/DE3473776D1/de
Priority to US06/579,941 priority patent/US4479848A/en
Publication of JPS59147433A publication Critical patent/JPS59147433A/ja
Publication of JPH0546095B2 publication Critical patent/JPH0546095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H10P50/00—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP58021423A 1983-02-14 1983-02-14 エツチング装置 Granted JPS59147433A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58021423A JPS59147433A (ja) 1983-02-14 1983-02-14 エツチング装置
EP84101441A EP0119455B1 (en) 1983-02-14 1984-02-13 Etching method and apparatus
DE8484101441T DE3473776D1 (en) 1983-02-14 1984-02-13 Etching method and apparatus
US06/579,941 US4479848A (en) 1983-02-14 1984-02-14 Etching method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58021423A JPS59147433A (ja) 1983-02-14 1983-02-14 エツチング装置

Publications (2)

Publication Number Publication Date
JPS59147433A JPS59147433A (ja) 1984-08-23
JPH0546095B2 true JPH0546095B2 (enExample) 1993-07-13

Family

ID=12054584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58021423A Granted JPS59147433A (ja) 1983-02-14 1983-02-14 エツチング装置

Country Status (4)

Country Link
US (1) US4479848A (enExample)
EP (1) EP0119455B1 (enExample)
JP (1) JPS59147433A (enExample)
DE (1) DE3473776D1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569717A (en) * 1983-05-24 1986-02-11 Dainippon Screen Mfg. Co., Ltd. Method of surface treatment
US4634645A (en) * 1984-04-13 1987-01-06 Nippon Telegraph And Telephone Corporation Method of forming resist micropattern
JPH066797B2 (ja) * 1985-03-11 1994-01-26 株式会社日立製作所 エツチングの終点検出方法
US4676868A (en) * 1986-04-23 1987-06-30 Fairchild Semiconductor Corporation Method for planarizing semiconductor substrates
US4846928A (en) * 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
US4841150A (en) * 1987-12-28 1989-06-20 The United States Of America As Represented By The Secretary Of The Air Force Reflection technique for thermal mapping of semiconductors
US5045149A (en) * 1988-10-24 1991-09-03 Vlsi Technology, Inc. Method and apparatus for end point detection
US4865683A (en) * 1988-11-03 1989-09-12 Lasa Industries, Inc. Method and apparatus for laser process control
DE3901017A1 (de) * 1989-01-14 1990-07-19 Leybold Ag Verfahren und vorrichtung zur ueberwachung des schichtabtrags bei einem trockenaetzprozess
US5173146A (en) * 1989-08-31 1992-12-22 Toyoda Gosei Co., Ltd. Plasma treatment method
US5097430A (en) * 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
US4975141A (en) * 1990-03-30 1990-12-04 International Business Machines Corporation Laser ablation for plasma etching endpoint detection
US5196285A (en) * 1990-05-18 1993-03-23 Xinix, Inc. Method for control of photoresist develop processes
JPH0645327A (ja) * 1991-01-09 1994-02-18 Nec Corp 半導体装置の製造方法
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
US5474650A (en) * 1991-04-04 1995-12-12 Hitachi, Ltd. Method and apparatus for dry etching
US6008133A (en) 1991-04-04 1999-12-28 Hitachi, Ltd. Method and apparatus for dry etching
US5318667A (en) * 1991-04-04 1994-06-07 Hitachi, Ltd. Method and apparatus for dry etching
EP0511448A1 (en) * 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
FR2680414B1 (fr) * 1991-08-14 1995-05-24 Sofie Ensemble d'observation et de mesures interferometriques simultanees par laser, en particulier sur des structures a couches minces.
JPH06188229A (ja) * 1992-12-16 1994-07-08 Tokyo Electron Yamanashi Kk エッチングの後処理方法
US5563709A (en) * 1994-09-13 1996-10-08 Integrated Process Equipment Corp. Apparatus for measuring, thinning and flattening silicon structures
KR0144376B1 (ko) * 1995-03-22 1998-08-17 김주용 식각 부산물에 대한 모니터링 방법 및 그 장치
JPH08306666A (ja) * 1995-05-02 1996-11-22 Sony Corp ドライエッチング装置
EP0756318A1 (en) * 1995-07-24 1997-01-29 International Business Machines Corporation Method for real-time in-situ monitoring of a trench formation process
US6406641B1 (en) 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
US6106683A (en) * 1997-06-23 2000-08-22 Toyo Technologies Inc. Grazing angle plasma polisher (GAPP)
US6535779B1 (en) 1998-03-06 2003-03-18 Applied Materials, Inc. Apparatus and method for endpoint control and plasma monitoring
US6192826B1 (en) * 1998-04-23 2001-02-27 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US5964980A (en) * 1998-06-23 1999-10-12 Vlsi Technology, Inc. Fitted endpoint system
EP1125314A1 (en) 1998-07-10 2001-08-22 Applied Materials, Inc. Improved endpoint detection for substrate fabrication processes
US6077387A (en) * 1999-02-10 2000-06-20 Stmicroelectronics, Inc. Plasma emission detection for process control via fluorescent relay
JP2002113700A (ja) * 2000-10-05 2002-04-16 Sony Corp マイクロマシン製造装置、マイクロマシンの製造方法、回折格子ライトバルブの製造方法および表示装置の製造方法
JP4657473B2 (ja) * 2001-03-06 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
KR100448871B1 (ko) * 2001-09-21 2004-09-16 삼성전자주식회사 식각 종말점 검출창 및 이를 채용하는 식각 장치
KR100475082B1 (ko) * 2002-07-15 2005-03-10 삼성전자주식회사 무크롬 위상 반전 마스크의 제조방법
KR100538092B1 (ko) * 2003-02-27 2005-12-21 삼성전자주식회사 불순물 농도의 수직 분포 모니터링 방법 및 장치
US7355711B2 (en) * 2005-07-01 2008-04-08 Kla-Tencor Technologies Corporation Method for detecting an end-point for polishing a material
JP2008010818A (ja) * 2006-06-01 2008-01-17 Sumitomo Electric Ind Ltd 基板、基板検査方法、素子および基板の製造方法
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5535347B1 (ja) * 2013-02-04 2014-07-02 エピクルー株式会社 撮像装置、半導体製造装置および半導体製造方法
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
RU2608382C1 (ru) * 2015-10-15 2017-01-18 Акционерное общество "Лыткаринский завод оптического стекла" Способ установки ионного источника относительно обрабатываемой детали
US10541118B2 (en) * 2016-03-21 2020-01-21 Board Of Trustees Of Michigan State University Methods and apparatus for microwave plasma assisted chemical vapor deposition reactors
US10895539B2 (en) * 2017-10-20 2021-01-19 Lam Research Corporation In-situ chamber clean end point detection systems and methods using computer vision systems
GB201916079D0 (en) * 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method
JP7658779B2 (ja) * 2020-09-24 2025-04-08 芝浦メカトロニクス株式会社 プラズマ処理装置
JP7285884B2 (ja) * 2021-06-04 2023-06-02 日本電子株式会社 試料加工装置および試料加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858983A (en) * 1973-11-13 1975-01-07 Autech Corp Shaped product measurement
JPS53112670A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Monitor method of ion etching
US4198261A (en) * 1977-12-05 1980-04-15 Gould Inc. Method for end point detection during plasma etching
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
GB2061495B (en) * 1979-10-17 1984-03-14 Atomic Energy Authority Uk Measurement of the thickness of a liquid films
JPS5789474A (en) * 1980-11-21 1982-06-03 Hitachi Ltd Detection of final point of etching and apparatus therefor
JPS5792835A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Detection of etching finishing point and device thereof
GB2106241B (en) * 1981-09-25 1985-06-12 Welsh Nat School Med Measuring surface roughness

Also Published As

Publication number Publication date
US4479848A (en) 1984-10-30
EP0119455A3 (en) 1986-02-05
JPS59147433A (ja) 1984-08-23
EP0119455B1 (en) 1988-08-31
EP0119455A2 (en) 1984-09-26
DE3473776D1 (en) 1988-10-06

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