JPS5789474A - Detection of final point of etching and apparatus therefor - Google Patents
Detection of final point of etching and apparatus thereforInfo
- Publication number
- JPS5789474A JPS5789474A JP16330380A JP16330380A JPS5789474A JP S5789474 A JPS5789474 A JP S5789474A JP 16330380 A JP16330380 A JP 16330380A JP 16330380 A JP16330380 A JP 16330380A JP S5789474 A JPS5789474 A JP S5789474A
- Authority
- JP
- Japan
- Prior art keywords
- light
- etching
- final point
- reflected
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To assuredly detect the final point of etching a masking plate, by detecting the final point of etching on the basis of the ratio of the quantity of irradiation light regularly reflected from the masking plate to that of irregularly reflected light. CONSTITUTION:A masking plate 2 is rotated in a unitary body by rotation of a spinner 1, and an etching solution is sprayed through a nozzle 8 to etch a chromium film 2b on the surface of the plate 2 into a desired pattern. Light is irradiated onto the plate 2 from a light irradiation part 9 at the same time when etching is started. Light IR' reflected from the surface of the film 2b is received by the first light receiver 13 to detect its quantity. Light IS' reflected from a side surface 2c is irregularly reflected along various directions because the side surface 2c is in a rugged state and partially received by the second light receiver 16 to detect its quantity. The ratio IS/IR of the two light quantities is calculated by an operation circuit 17. When the ratio comes in the error range of the reference signal of a reference signal source 19, a comparing circuit 18 detects the final point of etching, so that a control circuit 5 closes the nozzle 8 through a nozzle closing and opening circuit 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16330380A JPS5789474A (en) | 1980-11-21 | 1980-11-21 | Detection of final point of etching and apparatus therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16330380A JPS5789474A (en) | 1980-11-21 | 1980-11-21 | Detection of final point of etching and apparatus therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789474A true JPS5789474A (en) | 1982-06-03 |
Family
ID=15771258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16330380A Pending JPS5789474A (en) | 1980-11-21 | 1980-11-21 | Detection of final point of etching and apparatus therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789474A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5986222A (en) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | Dry etching method |
JPS59147433A (en) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | Etching device |
JPH0272623A (en) * | 1988-09-07 | 1990-03-12 | Tokyo Electron Ltd | Termination detection method |
US6193900B1 (en) * | 1997-11-29 | 2001-02-27 | Electronics And Telecommunications Research Institute | Method for sensing etch of distributed bragg reflector in real time |
JP2014022411A (en) * | 2012-07-12 | 2014-02-03 | Research Institute Of Nanophotonics | Etching method using near-field light |
-
1980
- 1980-11-21 JP JP16330380A patent/JPS5789474A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5986222A (en) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | Dry etching method |
JPS59147433A (en) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | Etching device |
JPH0546095B2 (en) * | 1983-02-14 | 1993-07-13 | Hitachi Ltd | |
JPH0272623A (en) * | 1988-09-07 | 1990-03-12 | Tokyo Electron Ltd | Termination detection method |
US6193900B1 (en) * | 1997-11-29 | 2001-02-27 | Electronics And Telecommunications Research Institute | Method for sensing etch of distributed bragg reflector in real time |
JP2014022411A (en) * | 2012-07-12 | 2014-02-03 | Research Institute Of Nanophotonics | Etching method using near-field light |
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