JPH0544835B2 - - Google Patents
Info
- Publication number
- JPH0544835B2 JPH0544835B2 JP60030577A JP3057785A JPH0544835B2 JP H0544835 B2 JPH0544835 B2 JP H0544835B2 JP 60030577 A JP60030577 A JP 60030577A JP 3057785 A JP3057785 A JP 3057785A JP H0544835 B2 JPH0544835 B2 JP H0544835B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- layer
- region
- semiconductor layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000001747 exhibiting effect Effects 0.000 claims 6
- 239000011810 insulating material Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 238000000034 method Methods 0.000 description 17
- 239000000969 carrier Substances 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030577A JPS61191071A (ja) | 1985-02-20 | 1985-02-20 | 伝導度変調型半導体装置及びその製造方法 |
| DE8686102047T DE3680352D1 (de) | 1985-02-20 | 1986-02-18 | Leitfaehigkeitsmodulations-halbleiteranordnung und verfahren zu ihrer herstellung. |
| DE3650573T DE3650573T2 (de) | 1985-02-20 | 1986-02-18 | Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer Herstellung |
| EP90115990A EP0406916B1 (en) | 1985-02-20 | 1986-02-18 | Conductivity modulation type semiconductor device and method for manufacturing the same |
| EP86102047A EP0192229B1 (en) | 1985-02-20 | 1986-02-18 | Conductivity modulation type semiconductor device and method for manufacturing the same |
| US07/593,461 US5128277A (en) | 1985-02-20 | 1990-10-03 | Conductivity modulation type semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030577A JPS61191071A (ja) | 1985-02-20 | 1985-02-20 | 伝導度変調型半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61191071A JPS61191071A (ja) | 1986-08-25 |
| JPH0544835B2 true JPH0544835B2 (US06650917-20031118-M00005.png) | 1993-07-07 |
Family
ID=12307706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60030577A Granted JPS61191071A (ja) | 1985-02-20 | 1985-02-20 | 伝導度変調型半導体装置及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5128277A (US06650917-20031118-M00005.png) |
| EP (2) | EP0406916B1 (US06650917-20031118-M00005.png) |
| JP (1) | JPS61191071A (US06650917-20031118-M00005.png) |
| DE (2) | DE3680352D1 (US06650917-20031118-M00005.png) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2633536B2 (ja) * | 1986-11-05 | 1997-07-23 | 株式会社東芝 | 接合型半導体基板の製造方法 |
| JPH07107935B2 (ja) * | 1988-02-04 | 1995-11-15 | 株式会社東芝 | 半導体装置 |
| JPH0691263B2 (ja) * | 1988-10-19 | 1994-11-14 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH02312280A (ja) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
| JPH07263721A (ja) * | 1994-03-25 | 1995-10-13 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
| WO1999046809A1 (en) * | 1998-03-09 | 1999-09-16 | Harris Corporation | Devices formable by low temperature direct bonding |
| US6274892B1 (en) | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
| JP3906076B2 (ja) * | 2001-01-31 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150870A (en) * | 1980-03-25 | 1981-11-21 | Rca Corp | Vertical mos-fet device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3312880A (en) * | 1962-12-12 | 1967-04-04 | Sylvania Electric Prod | Four-layer semiconductor switching device having turn-on and turn-off gain |
| US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
| DE1514727A1 (de) * | 1965-09-30 | 1969-06-19 | Schaefer Dipl Phys Siegfried | Herstellung von pn-UEbergaengen durch plastische Verformung von Halbleitern |
| US3659334A (en) * | 1970-10-13 | 1972-05-02 | Rca Corp | High power high frequency device |
| JPS4843590A (US06650917-20031118-M00005.png) * | 1971-10-04 | 1973-06-23 | ||
| DE2926734C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor mit einem durch plastische Verformung erzeugten pn-Übergang und Verfahren zu einer Herstellung |
| US4383268A (en) * | 1980-07-07 | 1983-05-10 | Rca Corporation | High-current, high-voltage semiconductor devices having a metallurgical grade substrate |
| SE8107136L (sv) * | 1980-12-02 | 1982-06-03 | Gen Electric | Styrelektrodforsedd likriktaranordning |
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| DE3583183D1 (de) * | 1984-05-09 | 1991-07-18 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines halbleitersubstrates. |
| US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
| JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
| US4639754A (en) * | 1985-02-25 | 1987-01-27 | Rca Corporation | Vertical MOSFET with diminished bipolar effects |
| JPS6350013A (ja) * | 1986-08-20 | 1988-03-02 | Meidensha Electric Mfg Co Ltd | 半導体素子の製造方法 |
| JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
-
1985
- 1985-02-20 JP JP60030577A patent/JPS61191071A/ja active Granted
-
1986
- 1986-02-18 DE DE8686102047T patent/DE3680352D1/de not_active Expired - Lifetime
- 1986-02-18 EP EP90115990A patent/EP0406916B1/en not_active Expired - Lifetime
- 1986-02-18 EP EP86102047A patent/EP0192229B1/en not_active Expired
- 1986-02-18 DE DE3650573T patent/DE3650573T2/de not_active Expired - Lifetime
-
1990
- 1990-10-03 US US07/593,461 patent/US5128277A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150870A (en) * | 1980-03-25 | 1981-11-21 | Rca Corp | Vertical mos-fet device |
Also Published As
| Publication number | Publication date |
|---|---|
| US5128277A (en) | 1992-07-07 |
| EP0406916A2 (en) | 1991-01-09 |
| EP0406916B1 (en) | 1996-09-25 |
| EP0192229B1 (en) | 1991-07-24 |
| EP0192229A3 (en) | 1987-03-25 |
| EP0192229A2 (en) | 1986-08-27 |
| JPS61191071A (ja) | 1986-08-25 |
| EP0406916A3 (en) | 1991-08-28 |
| DE3680352D1 (de) | 1991-08-29 |
| DE3650573D1 (de) | 1996-10-31 |
| DE3650573T2 (de) | 1997-03-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |