DE3650573D1 - Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents
Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE3650573D1 DE3650573D1 DE3650573T DE3650573T DE3650573D1 DE 3650573 D1 DE3650573 D1 DE 3650573D1 DE 3650573 T DE3650573 T DE 3650573T DE 3650573 T DE3650573 T DE 3650573T DE 3650573 D1 DE3650573 D1 DE 3650573D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- semiconductor device
- conductivity modulation
- modulation semiconductor
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60030577A JPS61191071A (ja) | 1985-02-20 | 1985-02-20 | 伝導度変調型半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3650573D1 true DE3650573D1 (de) | 1996-10-31 |
DE3650573T2 DE3650573T2 (de) | 1997-03-06 |
Family
ID=12307706
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3650573T Expired - Lifetime DE3650573T2 (de) | 1985-02-20 | 1986-02-18 | Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer Herstellung |
DE8686102047T Expired - Lifetime DE3680352D1 (de) | 1985-02-20 | 1986-02-18 | Leitfaehigkeitsmodulations-halbleiteranordnung und verfahren zu ihrer herstellung. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686102047T Expired - Lifetime DE3680352D1 (de) | 1985-02-20 | 1986-02-18 | Leitfaehigkeitsmodulations-halbleiteranordnung und verfahren zu ihrer herstellung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5128277A (de) |
EP (2) | EP0192229B1 (de) |
JP (1) | JPS61191071A (de) |
DE (2) | DE3650573T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2633536B2 (ja) * | 1986-11-05 | 1997-07-23 | 株式会社東芝 | 接合型半導体基板の製造方法 |
JPH07107935B2 (ja) * | 1988-02-04 | 1995-11-15 | 株式会社東芝 | 半導体装置 |
JPH0691263B2 (ja) * | 1988-10-19 | 1994-11-14 | 株式会社東芝 | 半導体装置の製造方法 |
JPH02312280A (ja) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
JPH07263721A (ja) * | 1994-03-25 | 1995-10-13 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
EP1062692A1 (de) * | 1998-03-09 | 2000-12-27 | Harris Corporation | Durch direktes niedertemperaturbonden hergestellte anordnungen |
US6274892B1 (en) | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
JP3906076B2 (ja) * | 2001-01-31 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312880A (en) * | 1962-12-12 | 1967-04-04 | Sylvania Electric Prod | Four-layer semiconductor switching device having turn-on and turn-off gain |
US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
DE1514727A1 (de) * | 1965-09-30 | 1969-06-19 | Schaefer Dipl Phys Siegfried | Herstellung von pn-UEbergaengen durch plastische Verformung von Halbleitern |
US3659334A (en) * | 1970-10-13 | 1972-05-02 | Rca Corp | High power high frequency device |
JPS4843590A (de) * | 1971-10-04 | 1973-06-23 | ||
DE2926734C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor mit einem durch plastische Verformung erzeugten pn-Übergang und Verfahren zu einer Herstellung |
US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
US4383268A (en) * | 1980-07-07 | 1983-05-10 | Rca Corporation | High-current, high-voltage semiconductor devices having a metallurgical grade substrate |
SE8107136L (sv) * | 1980-12-02 | 1982-06-03 | Gen Electric | Styrelektrodforsedd likriktaranordning |
US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
EP0161740B1 (de) * | 1984-05-09 | 1991-06-12 | Kabushiki Kaisha Toshiba | Verfahren zur Herstellung eines Halbleitersubstrates |
US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
US4639754A (en) * | 1985-02-25 | 1987-01-27 | Rca Corporation | Vertical MOSFET with diminished bipolar effects |
JPS6350013A (ja) * | 1986-08-20 | 1988-03-02 | Meidensha Electric Mfg Co Ltd | 半導体素子の製造方法 |
JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
-
1985
- 1985-02-20 JP JP60030577A patent/JPS61191071A/ja active Granted
-
1986
- 1986-02-18 DE DE3650573T patent/DE3650573T2/de not_active Expired - Lifetime
- 1986-02-18 EP EP86102047A patent/EP0192229B1/de not_active Expired
- 1986-02-18 EP EP90115990A patent/EP0406916B1/de not_active Expired - Lifetime
- 1986-02-18 DE DE8686102047T patent/DE3680352D1/de not_active Expired - Lifetime
-
1990
- 1990-10-03 US US07/593,461 patent/US5128277A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0406916A2 (de) | 1991-01-09 |
EP0192229A3 (en) | 1987-03-25 |
EP0406916B1 (de) | 1996-09-25 |
EP0192229B1 (de) | 1991-07-24 |
DE3650573T2 (de) | 1997-03-06 |
EP0192229A2 (de) | 1986-08-27 |
DE3680352D1 (de) | 1991-08-29 |
US5128277A (en) | 1992-07-07 |
JPS61191071A (ja) | 1986-08-25 |
JPH0544835B2 (de) | 1993-07-07 |
EP0406916A3 (en) | 1991-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |