JPH053750B2 - - Google Patents

Info

Publication number
JPH053750B2
JPH053750B2 JP60008734A JP873485A JPH053750B2 JP H053750 B2 JPH053750 B2 JP H053750B2 JP 60008734 A JP60008734 A JP 60008734A JP 873485 A JP873485 A JP 873485A JP H053750 B2 JPH053750 B2 JP H053750B2
Authority
JP
Japan
Prior art keywords
film
manufacturing
melting point
source
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60008734A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61168266A (ja
Inventor
Juichi Mikata
Toshiro Usami
Masakazu Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60008734A priority Critical patent/JPS61168266A/ja
Publication of JPS61168266A publication Critical patent/JPS61168266A/ja
Publication of JPH053750B2 publication Critical patent/JPH053750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP60008734A 1985-01-21 1985-01-21 Ｍｉｓ型半導体装置の製造方法 Granted JPS61168266A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60008734A JPS61168266A (ja) 1985-01-21 1985-01-21 Ｍｉｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60008734A JPS61168266A (ja) 1985-01-21 1985-01-21 Ｍｉｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61168266A JPS61168266A (ja) 1986-07-29
JPH053750B2 true JPH053750B2 (enrdf_load_stackoverflow) 1993-01-18

Family

ID=11701179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60008734A Granted JPS61168266A (ja) 1985-01-21 1985-01-21 Ｍｉｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61168266A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
JPH01298765A (ja) * 1988-05-27 1989-12-01 Fujitsu Ltd 半導体装置及びその製造方法
US9147779B2 (en) * 2013-05-01 2015-09-29 The Boeing Company Solar cell by-pass diode with improved metal contacts

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices

Also Published As

Publication number Publication date
JPS61168266A (ja) 1986-07-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term