JPH0534837B2 - - Google Patents
Info
- Publication number
- JPH0534837B2 JPH0534837B2 JP58081124A JP8112483A JPH0534837B2 JP H0534837 B2 JPH0534837 B2 JP H0534837B2 JP 58081124 A JP58081124 A JP 58081124A JP 8112483 A JP8112483 A JP 8112483A JP H0534837 B2 JPH0534837 B2 JP H0534837B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- thin film
- thickness
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- 238000000034 method Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8112483A JPS59205761A (ja) | 1983-05-10 | 1983-05-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8112483A JPS59205761A (ja) | 1983-05-10 | 1983-05-10 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59205761A JPS59205761A (ja) | 1984-11-21 |
| JPH0534837B2 true JPH0534837B2 (de) | 1993-05-25 |
Family
ID=13737637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8112483A Granted JPS59205761A (ja) | 1983-05-10 | 1983-05-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59205761A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136260A (ja) * | 1983-12-24 | 1985-07-19 | Sony Corp | 電界効果型トランジスタの製造方法 |
| JPH07120805B2 (ja) * | 1987-10-12 | 1995-12-20 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6337232B1 (en) | 1995-06-07 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region |
| JP3992976B2 (ja) | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4030758B2 (ja) | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5891678A (ja) * | 1981-11-27 | 1983-05-31 | Nec Corp | 半導体装置およびその製造方法 |
-
1983
- 1983-05-10 JP JP8112483A patent/JPS59205761A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5891678A (ja) * | 1981-11-27 | 1983-05-31 | Nec Corp | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59205761A (ja) | 1984-11-21 |
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