JPH05308077A - バイポーラ型半導体装置およびその製造方法 - Google Patents
バイポーラ型半導体装置およびその製造方法Info
- Publication number
- JPH05308077A JPH05308077A JP3191545A JP19154591A JPH05308077A JP H05308077 A JPH05308077 A JP H05308077A JP 3191545 A JP3191545 A JP 3191545A JP 19154591 A JP19154591 A JP 19154591A JP H05308077 A JPH05308077 A JP H05308077A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- polycrystalline silicon
- concentration
- polycrystalline
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910002806A KR920017270A (ko) | 1991-02-21 | 1991-02-21 | 다결정 실리콘 사이드 월(side wall)을 이용한 Laterally Graded Emitter(LGE)구조의 바이폴라 트랜지스터 제조방법 |
| KR1991-2806 | 1991-02-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05308077A true JPH05308077A (ja) | 1993-11-19 |
Family
ID=19311319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3191545A Pending JPH05308077A (ja) | 1991-02-21 | 1991-07-31 | バイポーラ型半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH05308077A (ko) |
| KR (1) | KR920017270A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100422360B1 (ko) * | 1996-10-29 | 2004-05-31 | 주식회사 하이닉스반도체 | 바이폴라트랜지스터및그의제조방법 |
| KR100505622B1 (ko) * | 1999-01-11 | 2005-08-04 | 삼성전자주식회사 | 바이폴라 트랜지스터의 제조방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61198673A (ja) * | 1985-02-28 | 1986-09-03 | Canon Inc | 半導体装置の製造方法 |
| JPH02283032A (ja) * | 1989-04-24 | 1990-11-20 | Nec Corp | 縦型バイポーラトランジスタ |
-
1991
- 1991-02-21 KR KR1019910002806A patent/KR920017270A/ko not_active Application Discontinuation
- 1991-07-31 JP JP3191545A patent/JPH05308077A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61198673A (ja) * | 1985-02-28 | 1986-09-03 | Canon Inc | 半導体装置の製造方法 |
| JPH02283032A (ja) * | 1989-04-24 | 1990-11-20 | Nec Corp | 縦型バイポーラトランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920017270A (ko) | 1992-09-26 |
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