JPH0529135B2 - - Google Patents

Info

Publication number
JPH0529135B2
JPH0529135B2 JP6359087A JP6359087A JPH0529135B2 JP H0529135 B2 JPH0529135 B2 JP H0529135B2 JP 6359087 A JP6359087 A JP 6359087A JP 6359087 A JP6359087 A JP 6359087A JP H0529135 B2 JPH0529135 B2 JP H0529135B2
Authority
JP
Japan
Prior art keywords
transistor
base
emitter
electrode
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6359087A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63265461A (ja
Inventor
Toshio Shigekane
Shinichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62063590A priority Critical patent/JPS63265461A/ja
Priority to EP19870118403 priority patent/EP0278086B1/en
Priority to DE8787118403T priority patent/DE3785575T2/de
Publication of JPS63265461A publication Critical patent/JPS63265461A/ja
Priority to US07/449,412 priority patent/US4945396A/en
Publication of JPH0529135B2 publication Critical patent/JPH0529135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP62063590A 1986-12-15 1987-03-18 半導体装置 Granted JPS63265461A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62063590A JPS63265461A (ja) 1986-12-15 1987-03-18 半導体装置
EP19870118403 EP0278086B1 (en) 1986-12-15 1987-12-11 Current limited semiconductor circuit
DE8787118403T DE3785575T2 (de) 1986-12-15 1987-12-11 Strombegrenzte halbleiterschaltung.
US07/449,412 US4945396A (en) 1986-12-15 1989-12-15 Semiconductor device having Darlington transistors

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP29789586 1986-12-15
JP61-297895 1986-12-15
JP62063590A JPS63265461A (ja) 1986-12-15 1987-03-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS63265461A JPS63265461A (ja) 1988-11-01
JPH0529135B2 true JPH0529135B2 (enExample) 1993-04-28

Family

ID=26404715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62063590A Granted JPS63265461A (ja) 1986-12-15 1987-03-18 半導体装置

Country Status (4)

Country Link
US (1) US4945396A (enExample)
EP (1) EP0278086B1 (enExample)
JP (1) JPS63265461A (enExample)
DE (1) DE3785575T2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734457B2 (ja) * 1988-04-05 1995-04-12 株式会社東芝 半導体装置
US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5159213A (en) * 1990-06-07 1992-10-27 North American Philips Corporation Logic gate circuit with limited transient bounce in potential of the internal voltage supply lines
US5296735A (en) * 1991-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Power semiconductor module with multiple shielding layers
US5550497A (en) * 1994-05-26 1996-08-27 Sgs-Thomson Microelectronics, Inc. Power driver circuit with reduced turnoff time
DE19505269C1 (de) * 1995-02-16 1996-05-23 Siemens Ag Integrierbare Schaltungsanordnung zur Arbeitsstromstabilisierung eines Transistors durch Gegenkopplung, insbesondere geeignet für batteriebetriebene Geräte

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657577A (en) * 1971-04-23 1972-04-18 Matsushita Electronics Corp Synchronizing signal separating circuit
JPS57145355A (en) * 1981-03-04 1982-09-08 Nippon Denso Co Ltd Semiconductor device
JPS5881313A (ja) * 1981-11-10 1983-05-16 Fuji Electric Co Ltd 過電流制限型半導体装置
JPS58222569A (ja) * 1982-06-18 1983-12-24 Nec Corp 複合半導体装置
US4616144A (en) * 1983-01-12 1986-10-07 Kabushiki Kaisha Toshiba High withstand voltage Darlington transistor circuit
JPS60126919A (ja) * 1983-12-14 1985-07-06 Toshiba Corp ダ−リントントランジスタ回路
DE3509595A1 (de) * 1985-03-16 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Schaltungsanordnung
JPS62214660A (ja) * 1986-03-17 1987-09-21 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE3785575D1 (de) 1993-05-27
US4945396A (en) 1990-07-31
JPS63265461A (ja) 1988-11-01
DE3785575T2 (de) 1993-07-29
EP0278086A3 (en) 1990-07-18
EP0278086A2 (en) 1988-08-17
EP0278086B1 (en) 1993-04-21

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