DE3785575T2 - Strombegrenzte halbleiterschaltung. - Google Patents

Strombegrenzte halbleiterschaltung.

Info

Publication number
DE3785575T2
DE3785575T2 DE8787118403T DE3785575T DE3785575T2 DE 3785575 T2 DE3785575 T2 DE 3785575T2 DE 8787118403 T DE8787118403 T DE 8787118403T DE 3785575 T DE3785575 T DE 3785575T DE 3785575 T2 DE3785575 T2 DE 3785575T2
Authority
DE
Germany
Prior art keywords
base
transistor
emitter
electrode
darlington transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787118403T
Other languages
German (de)
English (en)
Other versions
DE3785575D1 (de
Inventor
Ltd Ito
Ltd Shigekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE3785575D1 publication Critical patent/DE3785575D1/de
Application granted granted Critical
Publication of DE3785575T2 publication Critical patent/DE3785575T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE8787118403T 1986-12-15 1987-12-11 Strombegrenzte halbleiterschaltung. Expired - Fee Related DE3785575T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29789586 1986-12-15
JP62063590A JPS63265461A (ja) 1986-12-15 1987-03-18 半導体装置

Publications (2)

Publication Number Publication Date
DE3785575D1 DE3785575D1 (de) 1993-05-27
DE3785575T2 true DE3785575T2 (de) 1993-07-29

Family

ID=26404715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787118403T Expired - Fee Related DE3785575T2 (de) 1986-12-15 1987-12-11 Strombegrenzte halbleiterschaltung.

Country Status (4)

Country Link
US (1) US4945396A (enExample)
EP (1) EP0278086B1 (enExample)
JP (1) JPS63265461A (enExample)
DE (1) DE3785575T2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734457B2 (ja) * 1988-04-05 1995-04-12 株式会社東芝 半導体装置
US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5159213A (en) * 1990-06-07 1992-10-27 North American Philips Corporation Logic gate circuit with limited transient bounce in potential of the internal voltage supply lines
US5296735A (en) * 1991-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Power semiconductor module with multiple shielding layers
US5550497A (en) * 1994-05-26 1996-08-27 Sgs-Thomson Microelectronics, Inc. Power driver circuit with reduced turnoff time
DE19505269C1 (de) * 1995-02-16 1996-05-23 Siemens Ag Integrierbare Schaltungsanordnung zur Arbeitsstromstabilisierung eines Transistors durch Gegenkopplung, insbesondere geeignet für batteriebetriebene Geräte

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657577A (en) * 1971-04-23 1972-04-18 Matsushita Electronics Corp Synchronizing signal separating circuit
JPS57145355A (en) * 1981-03-04 1982-09-08 Nippon Denso Co Ltd Semiconductor device
JPS5881313A (ja) * 1981-11-10 1983-05-16 Fuji Electric Co Ltd 過電流制限型半導体装置
JPS58222569A (ja) * 1982-06-18 1983-12-24 Nec Corp 複合半導体装置
US4616144A (en) * 1983-01-12 1986-10-07 Kabushiki Kaisha Toshiba High withstand voltage Darlington transistor circuit
JPS60126919A (ja) * 1983-12-14 1985-07-06 Toshiba Corp ダ−リントントランジスタ回路
DE3509595A1 (de) * 1985-03-16 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Schaltungsanordnung
JPS62214660A (ja) * 1986-03-17 1987-09-21 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE3785575D1 (de) 1993-05-27
US4945396A (en) 1990-07-31
JPH0529135B2 (enExample) 1993-04-28
JPS63265461A (ja) 1988-11-01
EP0278086A3 (en) 1990-07-18
EP0278086A2 (en) 1988-08-17
EP0278086B1 (en) 1993-04-21

Similar Documents

Publication Publication Date Title
DE2262297C2 (de) Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
DE2217456B2 (de) Transistorschaltung mit Antisättigungsschal tung
DE1130523B (de) Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
DE1514254B2 (de) Halbleiterbauelement
DE3881928T2 (de) Integrierte Schaltung zum Treiben induktiver Lasten.
DE3785575T2 (de) Strombegrenzte halbleiterschaltung.
DE3003955A1 (de) Signalverstaerkerschaltung mit ausgangsstrombegrenzung
DE2045567A1 (de) Integrierte Halbleiter Schaltungs Einrichtung
DE2940975T1 (enExample)
DE1762435B2 (de) Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor
DE2424251A1 (de) Darlington-schaltung
DE3017750C2 (de) Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor
DE1514830B2 (de) Optoelektronische, integrierte halbleiterschaltung
DE2444589A1 (de) Integrierte halbleiterschaltung
DE2237559A1 (de) Monolithisch integrierte spannungsstabilisierungsschaltung
EP0414934B1 (de) Eingangsschutzstruktur für integrierte Schaltungen
DE2263075A1 (de) Monolithische integrierte halbleiteranordnung
DE2112184A1 (de) Halbleitereinrichtung
DE1288200B (de) Integrierte Halbleiterschaltung
DE2423114A1 (de) Halbleitervorrichtung
DE69324130T2 (de) Eingangs-/ausgangsschutzschaltung
DE1762009B2 (de) Schaltungsanordnung mit einem ersten und einem zweiten transistor
DE3322265A1 (de) Halbleitervorrichtung
DE2329872A1 (de) Thyristor
DE2060561C2 (de) Planartransistor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee