JPH0528507B2 - - Google Patents

Info

Publication number
JPH0528507B2
JPH0528507B2 JP60085812A JP8581285A JPH0528507B2 JP H0528507 B2 JPH0528507 B2 JP H0528507B2 JP 60085812 A JP60085812 A JP 60085812A JP 8581285 A JP8581285 A JP 8581285A JP H0528507 B2 JPH0528507 B2 JP H0528507B2
Authority
JP
Japan
Prior art keywords
region
type
epitaxial layer
conductivity type
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60085812A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61244060A (ja
Inventor
Tomooki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60085812A priority Critical patent/JPS61244060A/ja
Publication of JPS61244060A publication Critical patent/JPS61244060A/ja
Publication of JPH0528507B2 publication Critical patent/JPH0528507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/658Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP60085812A 1985-04-22 1985-04-22 半導体装置 Granted JPS61244060A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60085812A JPS61244060A (ja) 1985-04-22 1985-04-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60085812A JPS61244060A (ja) 1985-04-22 1985-04-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS61244060A JPS61244060A (ja) 1986-10-30
JPH0528507B2 true JPH0528507B2 (enrdf_load_stackoverflow) 1993-04-26

Family

ID=13869273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60085812A Granted JPS61244060A (ja) 1985-04-22 1985-04-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61244060A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS61244060A (ja) 1986-10-30

Similar Documents

Publication Publication Date Title
US4933737A (en) Polysilon contacts to IC mesas
US4404738A (en) Method of fabricating an I2 L element and a linear transistor on one chip
JP3128808B2 (ja) 半導体装置
JPH0528507B2 (enrdf_load_stackoverflow)
JPH0258865A (ja) 半導体装置
JP2504547B2 (ja) バイポ―ラ形薄膜半導体装置
JPH061814B2 (ja) 半導体装置
JP2504529B2 (ja) バイポ―ラ形薄膜半導体装置
KR900001244B1 (ko) 바이포울러 트랜지스터
JP2752655B2 (ja) バイポーラ集積回路装置
JPS61214569A (ja) 半導体装置
JPH0436578B2 (enrdf_load_stackoverflow)
JP2777054B2 (ja) 半導体装置
JP2627289B2 (ja) 半導体集積回路の製造方法
JP2718376B2 (ja) 半導体集積回路およびその製造方法
JPH10335346A (ja) ラテラルpnpバイポーラ電子デバイスおよびその製造方法
JPS6347965A (ja) 半導体集積回路
JPS60776B2 (ja) 半導体装置
KR19990002164A (ko) 바이폴라 트랜지스터 및 그 제조 방법
JP2596384B2 (ja) 半導体装置
JPS63260159A (ja) 半導体装置
JPH0581191B2 (enrdf_load_stackoverflow)
JPH0834244B2 (ja) 半導体集積回路装置
JPS61228664A (ja) 半導体装置
JPS62104069A (ja) 半導体集積回路の製造方法