JPH0527271B2 - - Google Patents

Info

Publication number
JPH0527271B2
JPH0527271B2 JP58181465A JP18146583A JPH0527271B2 JP H0527271 B2 JPH0527271 B2 JP H0527271B2 JP 58181465 A JP58181465 A JP 58181465A JP 18146583 A JP18146583 A JP 18146583A JP H0527271 B2 JPH0527271 B2 JP H0527271B2
Authority
JP
Japan
Prior art keywords
region
semiconductor region
semiconductor
type semiconductor
charges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58181465A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074475A (ja
Inventor
Hiroyuki Matsumoto
Motoaki Abe
Tetsuo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58181465A priority Critical patent/JPS6074475A/ja
Publication of JPS6074475A publication Critical patent/JPS6074475A/ja
Publication of JPH0527271B2 publication Critical patent/JPH0527271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP58181465A 1983-09-29 1983-09-29 固体撮像素子 Granted JPS6074475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181465A JPS6074475A (ja) 1983-09-29 1983-09-29 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181465A JPS6074475A (ja) 1983-09-29 1983-09-29 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS6074475A JPS6074475A (ja) 1985-04-26
JPH0527271B2 true JPH0527271B2 (enrdf_load_stackoverflow) 1993-04-20

Family

ID=16101226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181465A Granted JPS6074475A (ja) 1983-09-29 1983-09-29 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS6074475A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114267B2 (ja) * 1985-12-28 1995-12-06 松下電子工業株式会社 固体撮像装置
JPH0618267B2 (ja) * 1986-10-28 1994-03-09 株式会社東芝 固体撮像装置
JP2007173390A (ja) * 2005-12-20 2007-07-05 Fujifilm Corp Ｃｃｄ型固体撮像素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632776A (en) * 1979-08-23 1981-04-02 Sanyo Electric Co Ltd Ccd image sensor
JPS574162A (en) * 1980-06-10 1982-01-09 Sony Corp Manufacture of charge transfer device
JPS5726971A (en) * 1980-07-24 1982-02-13 Sanyo Electric Co Ltd Solidstate image sensor

Also Published As

Publication number Publication date
JPS6074475A (ja) 1985-04-26

Similar Documents

Publication Publication Date Title
US4851890A (en) Solid-state image sensor
US4672455A (en) Solid-state image-sensor having reverse-biased substrate and transfer registers
JPS6329873B2 (enrdf_load_stackoverflow)
JP4282049B2 (ja) 半導体装置、光電変換装置及びカメラ
JPH0518465B2 (enrdf_load_stackoverflow)
JPH0527271B2 (enrdf_load_stackoverflow)
JPH0666344B2 (ja) 電荷結合素子
JP2964571B2 (ja) 固体撮像素子
JPS61229355A (ja) 固体撮像装置
JPH02278874A (ja) 固体撮像素子及びその製造方法
JP3085387B2 (ja) 電荷移送型固体撮像素子
JPS6239058A (ja) 固体撮像素子
Kosonocky et al. Schottky-barrier image sensor with 100% fill factor
JPS58161367A (ja) 電荷結合素子及びそれを用いた固体撮像素子
JP3047965B2 (ja) 固体撮像装置
JP2897689B2 (ja) 固体撮像装置
JP3179080B2 (ja) 電荷結合素子および該素子を備えた固体撮像素子
JP2004063498A (ja) Ｍｏｓ型固体撮像装置及びその製造方法
JPH07120774B2 (ja) 固体撮像装置
JPS62296552A (ja) 固体撮像装置の製造方法
JP2671151B2 (ja) 半導体装置
JPH03266465A (ja) 固体撮像装置
JPH0774336A (ja) 固体撮像素子
JP2853779B2 (ja) 固体撮像装置
JPS62296550A (ja) 固体撮像素子