JPH0527267B2 - - Google Patents
Info
- Publication number
- JPH0527267B2 JPH0527267B2 JP58177957A JP17795783A JPH0527267B2 JP H0527267 B2 JPH0527267 B2 JP H0527267B2 JP 58177957 A JP58177957 A JP 58177957A JP 17795783 A JP17795783 A JP 17795783A JP H0527267 B2 JPH0527267 B2 JP H0527267B2
- Authority
- JP
- Japan
- Prior art keywords
- low resistance
- region
- protrusion
- conductivity type
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58177957A JPS6070757A (ja) | 1983-09-28 | 1983-09-28 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58177957A JPS6070757A (ja) | 1983-09-28 | 1983-09-28 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6070757A JPS6070757A (ja) | 1985-04-22 |
| JPH0527267B2 true JPH0527267B2 (de) | 1993-04-20 |
Family
ID=16040033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58177957A Granted JPS6070757A (ja) | 1983-09-28 | 1983-09-28 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6070757A (de) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0480968A (ja) * | 1990-07-24 | 1992-03-13 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型電界効果半導体装置 |
| SG165252A1 (en) | 2009-03-25 | 2010-10-28 | Unisantis Electronics Jp Ltd | Semiconductor device and production method therefor |
| JP5032532B2 (ja) | 2009-06-05 | 2012-09-26 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| JP5006378B2 (ja) * | 2009-08-11 | 2012-08-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| JP5006379B2 (ja) * | 2009-09-16 | 2012-08-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP5356970B2 (ja) * | 2009-10-01 | 2013-12-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP5006375B2 (ja) * | 2009-12-10 | 2012-08-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| JP2011216657A (ja) * | 2010-03-31 | 2011-10-27 | Unisantis Electronics Japan Ltd | 半導体装置 |
| JP5087655B2 (ja) | 2010-06-15 | 2012-12-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
| US8916478B2 (en) | 2011-12-19 | 2014-12-23 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US8772175B2 (en) | 2011-12-19 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| JP5312656B2 (ja) * | 2012-08-29 | 2013-10-09 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP5491602B2 (ja) * | 2012-10-26 | 2014-05-14 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| JP5689193B2 (ja) * | 2014-02-27 | 2015-03-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| CN107145407B (zh) * | 2017-05-16 | 2020-10-27 | 中林云信(上海)网络技术有限公司 | 一种对数据进行本地备份的方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5378183A (en) * | 1976-12-22 | 1978-07-11 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS5574174A (en) * | 1978-11-30 | 1980-06-04 | Toshiba Corp | Interpolation type insulating gate field effect transistor |
| JPS5799780A (en) * | 1980-12-11 | 1982-06-21 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5840852A (ja) * | 1981-09-03 | 1983-03-09 | Toshiba Corp | 相補型ｍｏｓ半導体装置及びその製造方法 |
| JPS5874067A (ja) * | 1981-10-29 | 1983-05-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
1983
- 1983-09-28 JP JP58177957A patent/JPS6070757A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5378183A (en) * | 1976-12-22 | 1978-07-11 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS5574174A (en) * | 1978-11-30 | 1980-06-04 | Toshiba Corp | Interpolation type insulating gate field effect transistor |
| JPS5799780A (en) * | 1980-12-11 | 1982-06-21 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5840852A (ja) * | 1981-09-03 | 1983-03-09 | Toshiba Corp | 相補型ｍｏｓ半導体装置及びその製造方法 |
| JPS5874067A (ja) * | 1981-10-29 | 1983-05-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6070757A (ja) | 1985-04-22 |
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