JPH05217929A - 酸化拡散処理装置 - Google Patents

酸化拡散処理装置

Info

Publication number
JPH05217929A
JPH05217929A JP4040747A JP4074792A JPH05217929A JP H05217929 A JPH05217929 A JP H05217929A JP 4040747 A JP4040747 A JP 4040747A JP 4074792 A JP4074792 A JP 4074792A JP H05217929 A JPH05217929 A JP H05217929A
Authority
JP
Japan
Prior art keywords
processing container
gas
processing
container
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4040747A
Other languages
English (en)
Japanese (ja)
Inventor
Shingo Watanabe
伸吾 渡辺
Shinichi Kamidate
信一 神立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Tohoku Ltd
Mitsubishi Electric Corp
Original Assignee
Tokyo Electron Tohoku Ltd
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Tohoku Ltd, Mitsubishi Electric Corp filed Critical Tokyo Electron Tohoku Ltd
Priority to JP4040747A priority Critical patent/JPH05217929A/ja
Priority to KR1019930001172A priority patent/KR100228254B1/ko
Priority to US08/011,372 priority patent/US5330352A/en
Priority to TW082100635A priority patent/TW284908B/zh
Publication of JPH05217929A publication Critical patent/JPH05217929A/ja
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • H10P32/12
    • H10P32/171

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
JP4040747A 1992-01-31 1992-01-31 酸化拡散処理装置 Pending JPH05217929A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4040747A JPH05217929A (ja) 1992-01-31 1992-01-31 酸化拡散処理装置
KR1019930001172A KR100228254B1 (ko) 1992-01-31 1993-01-29 산화확산처리장치
US08/011,372 US5330352A (en) 1992-01-31 1993-01-29 Oxidation/diffusion processing apparatus
TW082100635A TW284908B (cg-RX-API-DMAC10.html) 1992-01-31 1993-02-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4040747A JPH05217929A (ja) 1992-01-31 1992-01-31 酸化拡散処理装置

Publications (1)

Publication Number Publication Date
JPH05217929A true JPH05217929A (ja) 1993-08-27

Family

ID=12589230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4040747A Pending JPH05217929A (ja) 1992-01-31 1992-01-31 酸化拡散処理装置

Country Status (4)

Country Link
US (1) US5330352A (cg-RX-API-DMAC10.html)
JP (1) JPH05217929A (cg-RX-API-DMAC10.html)
KR (1) KR100228254B1 (cg-RX-API-DMAC10.html)
TW (1) TW284908B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29611438U1 (de) * 1996-06-18 1996-09-05 Rohde, Jörn, 10707 Berlin Golfschlägerschaft
DE19626355A1 (de) * 1996-06-18 1998-01-15 Joern Rohde Golfschlägerschaft

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
KR970003646B1 (ko) * 1992-05-15 1997-03-20 신에쯔 세끼에이 가부시끼가이샤 종형열처리장치 및 보온체와 그 제조방법
US5445521A (en) * 1993-05-31 1995-08-29 Tokyo Electron Kabushiki Kaisha Heat treating method and device
US5417803A (en) * 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
KR0161417B1 (ko) * 1995-07-11 1999-02-01 김광호 가스흐름이 개선된 종형확산로
JP3471144B2 (ja) * 1995-09-06 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置及びその断熱構造体並びに遮熱板
US5605454A (en) * 1995-10-12 1997-02-25 Vlsi Technology, Inc. Four port tube to extend the life of quartz tubes used for the well drive process
FR2747402B1 (fr) * 1996-04-15 1998-05-22 Sgs Thomson Microelectronics Four a diffusion
JP3270730B2 (ja) 1997-03-21 2002-04-02 株式会社日立国際電気 基板処理装置及び基板処理方法
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
JP3644880B2 (ja) * 2000-06-20 2005-05-11 東京エレクトロン株式会社 縦型熱処理装置
JP4633269B2 (ja) * 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US7128570B2 (en) * 2004-01-21 2006-10-31 Asm International N.V. Method and apparatus for purging seals in a thermal reactor
JP4508893B2 (ja) * 2004-02-02 2010-07-21 エーエスエム インターナショナル エヌ.ヴェー. 半導体処理方法、半導体処理システム及び反応チャンバにガスを供給する方法
US7351057B2 (en) * 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
US7795157B2 (en) * 2006-08-04 2010-09-14 Hitachi Kokusai Electric, Inc. Substrate treatment device and manufacturing method of semiconductor device
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
KR102678733B1 (ko) * 2015-12-04 2024-06-26 어플라이드 머티어리얼스, 인코포레이티드 Hdp-cvd 챔버 아킹을 방지하기 위한 첨단 코팅 방법 및 재료들
US10490431B2 (en) * 2017-03-10 2019-11-26 Yield Engineering Systems, Inc. Combination vacuum and over-pressure process chamber and methods related thereto
TW202321510A (zh) * 2021-09-21 2023-06-01 荷蘭商Asm Ip私人控股有限公司 反應器系統及其清潔方法
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245624A (ja) * 1986-04-18 1987-10-26 Hitachi Ltd 縦型処理装置
JPH02138473A (ja) * 1988-08-17 1990-05-28 Tel Sagami Ltd 縦型熱処理装置
JPH03249178A (ja) * 1990-02-27 1991-11-07 Ulvac B T U Kk Cvd装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
US5088922A (en) * 1990-01-23 1992-02-18 Tokyo Electron Sagami Limited Heat-treatment apparatus having exhaust system
JP3007432B2 (ja) * 1991-02-19 2000-02-07 東京エレクトロン株式会社 熱処理装置
JP3108460B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置
JP3108459B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245624A (ja) * 1986-04-18 1987-10-26 Hitachi Ltd 縦型処理装置
JPH02138473A (ja) * 1988-08-17 1990-05-28 Tel Sagami Ltd 縦型熱処理装置
JPH03249178A (ja) * 1990-02-27 1991-11-07 Ulvac B T U Kk Cvd装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29611438U1 (de) * 1996-06-18 1996-09-05 Rohde, Jörn, 10707 Berlin Golfschlägerschaft
DE19626355A1 (de) * 1996-06-18 1998-01-15 Joern Rohde Golfschlägerschaft

Also Published As

Publication number Publication date
KR930016142A (ko) 1993-08-26
US5330352A (en) 1994-07-19
TW284908B (cg-RX-API-DMAC10.html) 1996-09-01
KR100228254B1 (ko) 1999-11-01

Similar Documents

Publication Publication Date Title
JPH05217929A (ja) 酸化拡散処理装置
US5127365A (en) Vertical heat-treatment apparatus for semiconductor parts
KR0155158B1 (ko) 종형 처리 장치 및 처리방법
KR100443415B1 (ko) 열처리장치
US5709543A (en) Vertical heat treatment apparatus
CN100395871C (zh) 热处理方法以及热处理装置
EP1152461A2 (en) Oxidizing method and oxidation system
JPH08264521A (ja) 半導体製造用反応炉
JPH0982655A (ja) 熱処理方法
WO2003041139A1 (en) Thermal treating apparatus
US5296412A (en) Method of heat treating semiconductor wafers by varying the pressure and temperature
JP3915314B2 (ja) 枚葉式の処理装置
JPH0745547A (ja) 熱処理装置
JPS62140413A (ja) 縦型拡散装置
JP3081886B2 (ja) 成膜方法
JP3173698B2 (ja) 熱処理方法及びその装置
JP2001308085A (ja) 熱処理方法
JP4394843B2 (ja) 薄膜形成方法
JP2003045808A (ja) 縦型熱処理装置および縦型熱処理方法
KR100538270B1 (ko) 반도체장치 제조용 확산공정설비
JPH09219375A (ja) 半導体製造装置
JPH07122504A (ja) 成膜方法
JPS5856341A (ja) 熱処理方法および熱処理装置
JPH1167782A (ja) 熱処理方法
JP2000077346A (ja) 熱処理装置

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 19980310