JPH0519812B2 - - Google Patents
Info
- Publication number
- JPH0519812B2 JPH0519812B2 JP57144185A JP14418582A JPH0519812B2 JP H0519812 B2 JPH0519812 B2 JP H0519812B2 JP 57144185 A JP57144185 A JP 57144185A JP 14418582 A JP14418582 A JP 14418582A JP H0519812 B2 JPH0519812 B2 JP H0519812B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type
- region
- field effect
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57144185A JPS5934665A (ja) | 1982-08-20 | 1982-08-20 | 電界効果半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57144185A JPS5934665A (ja) | 1982-08-20 | 1982-08-20 | 電界効果半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5934665A JPS5934665A (ja) | 1984-02-25 |
| JPH0519812B2 true JPH0519812B2 (enrdf_load_stackoverflow) | 1993-03-17 |
Family
ID=15356173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57144185A Granted JPS5934665A (ja) | 1982-08-20 | 1982-08-20 | 電界効果半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5934665A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180868A (ja) * | 1984-09-27 | 1986-04-24 | Nec Corp | 電界効果トランジスタ |
| US6222240B1 (en) | 1998-07-22 | 2001-04-24 | Advanced Micro Devices, Inc. | Salicide and gate dielectric formed from a single layer of refractory metal |
-
1982
- 1982-08-20 JP JP57144185A patent/JPS5934665A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5934665A (ja) | 1984-02-25 |
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