JPS6364891B2 - - Google Patents

Info

Publication number
JPS6364891B2
JPS6364891B2 JP57166117A JP16611782A JPS6364891B2 JP S6364891 B2 JPS6364891 B2 JP S6364891B2 JP 57166117 A JP57166117 A JP 57166117A JP 16611782 A JP16611782 A JP 16611782A JP S6364891 B2 JPS6364891 B2 JP S6364891B2
Authority
JP
Japan
Prior art keywords
mask
carrier
gate
projected range
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57166117A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955072A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57166117A priority Critical patent/JPS5955072A/ja
Publication of JPS5955072A publication Critical patent/JPS5955072A/ja
Publication of JPS6364891B2 publication Critical patent/JPS6364891B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57166117A 1982-09-24 1982-09-24 半導体装置の製造方法 Granted JPS5955072A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166117A JPS5955072A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166117A JPS5955072A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5955072A JPS5955072A (ja) 1984-03-29
JPS6364891B2 true JPS6364891B2 (enrdf_load_stackoverflow) 1988-12-14

Family

ID=15825338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166117A Granted JPS5955072A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5955072A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101998U (enrdf_load_stackoverflow) * 1989-01-27 1990-08-14

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108935A (en) * 1990-11-16 1992-04-28 Texas Instruments Incorporated Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
JPS5414174A (en) * 1977-07-04 1979-02-02 Nec Corp Manufacture for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101998U (enrdf_load_stackoverflow) * 1989-01-27 1990-08-14

Also Published As

Publication number Publication date
JPS5955072A (ja) 1984-03-29

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