JPS5934665A - 電界効果半導体装置の製造方法 - Google Patents

電界効果半導体装置の製造方法

Info

Publication number
JPS5934665A
JPS5934665A JP57144185A JP14418582A JPS5934665A JP S5934665 A JPS5934665 A JP S5934665A JP 57144185 A JP57144185 A JP 57144185A JP 14418582 A JP14418582 A JP 14418582A JP S5934665 A JPS5934665 A JP S5934665A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
effect semiconductor
impurity concentration
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57144185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519812B2 (enrdf_load_stackoverflow
Inventor
Naoki Yokoyama
直樹 横山
Hiroyuki Onodera
小野寺　裕幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57144185A priority Critical patent/JPS5934665A/ja
Publication of JPS5934665A publication Critical patent/JPS5934665A/ja
Publication of JPH0519812B2 publication Critical patent/JPH0519812B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57144185A 1982-08-20 1982-08-20 電界効果半導体装置の製造方法 Granted JPS5934665A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57144185A JPS5934665A (ja) 1982-08-20 1982-08-20 電界効果半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57144185A JPS5934665A (ja) 1982-08-20 1982-08-20 電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5934665A true JPS5934665A (ja) 1984-02-25
JPH0519812B2 JPH0519812B2 (enrdf_load_stackoverflow) 1993-03-17

Family

ID=15356173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57144185A Granted JPS5934665A (ja) 1982-08-20 1982-08-20 電界効果半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5934665A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180868A (ja) * 1984-09-27 1986-04-24 Nec Corp 電界効果トランジスタ
US6222240B1 (en) 1998-07-22 2001-04-24 Advanced Micro Devices, Inc. Salicide and gate dielectric formed from a single layer of refractory metal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180868A (ja) * 1984-09-27 1986-04-24 Nec Corp 電界効果トランジスタ
US6222240B1 (en) 1998-07-22 2001-04-24 Advanced Micro Devices, Inc. Salicide and gate dielectric formed from a single layer of refractory metal

Also Published As

Publication number Publication date
JPH0519812B2 (enrdf_load_stackoverflow) 1993-03-17

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