JPH0514904B2 - - Google Patents
Info
- Publication number
- JPH0514904B2 JPH0514904B2 JP59147006A JP14700684A JPH0514904B2 JP H0514904 B2 JPH0514904 B2 JP H0514904B2 JP 59147006 A JP59147006 A JP 59147006A JP 14700684 A JP14700684 A JP 14700684A JP H0514904 B2 JPH0514904 B2 JP H0514904B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- gas
- drum substrate
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 40
- 108091008695 photoreceptors Proteins 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 30
- 239000011863 silicon-based powder Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14700684A JPS6126051A (ja) | 1984-07-17 | 1984-07-17 | アモルフアスシリコン電子写真用感光体の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14700684A JPS6126051A (ja) | 1984-07-17 | 1984-07-17 | アモルフアスシリコン電子写真用感光体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6126051A JPS6126051A (ja) | 1986-02-05 |
JPH0514904B2 true JPH0514904B2 (zh) | 1993-02-26 |
Family
ID=15420426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14700684A Granted JPS6126051A (ja) | 1984-07-17 | 1984-07-17 | アモルフアスシリコン電子写真用感光体の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6126051A (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07100865B2 (ja) * | 1986-03-13 | 1995-11-01 | 富士通株式会社 | 減圧cvd処理装置のクリーニング法 |
JPH0291658A (ja) * | 1988-09-29 | 1990-03-30 | Fuji Xerox Co Ltd | 電子写真用感光体の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136739A (ja) * | 1983-01-25 | 1984-08-06 | Fuji Electric Corp Res & Dev Ltd | 非晶質シリコン電子写真感光体の再生方法 |
-
1984
- 1984-07-17 JP JP14700684A patent/JPS6126051A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136739A (ja) * | 1983-01-25 | 1984-08-06 | Fuji Electric Corp Res & Dev Ltd | 非晶質シリコン電子写真感光体の再生方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6126051A (ja) | 1986-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6071797A (en) | Method for forming amorphous carbon thin film by plasma chemical vapor deposition | |
JPH06287760A (ja) | プラズマ処理装置及び処理方法 | |
EP0717127A2 (en) | Plasma processing method and apparatus | |
JP2582553B2 (ja) | プラズマcvd法による機能性堆積膜形成装置 | |
JP2646941B2 (ja) | 薄膜形成方法 | |
JPH0514904B2 (zh) | ||
US20040222188A1 (en) | Method of cleaning a deposition chamber and apparatus for depositing a metal on a substrate | |
US5718769A (en) | Plasma processing apparatus | |
JPH07169700A (ja) | 基板の処理装置 | |
JPH0124866B2 (zh) | ||
US5098812A (en) | Photosensitive device and manufacturing method for the same | |
JPS62200361A (ja) | 電子写真感光体の製造方法 | |
JP2956947B2 (ja) | 電子写真用感光体 | |
JP2867150B2 (ja) | マイクロ波プラズマcvd装置 | |
JP3402952B2 (ja) | 堆積膜形成方法及び堆積膜形成装置 | |
JPH07288193A (ja) | プラズマ処理装置 | |
JP3964570B2 (ja) | 電子写真感光体の製造方法及びそれに基づく電子写真感光体 | |
JPH0426764A (ja) | 堆積膜形成装置 | |
JPH0897161A (ja) | 高周波プラズマcvd法による堆積膜形成方法及び堆積膜形成装置 | |
JP2008214659A (ja) | 堆積膜の形成方法 | |
JP2925298B2 (ja) | 堆積膜形成方法 | |
JPS62158885A (ja) | ガスエツチング方法 | |
JPS5987462A (ja) | 非晶質感光ドラムの製造方法 | |
JPH04281460A (ja) | アモルファスシリコン感光体の作製方法 | |
JPS63166979A (ja) | ガスエツチング方法 |