JPH0514521Y2 - - Google Patents
Info
- Publication number
- JPH0514521Y2 JPH0514521Y2 JP1982188750U JP18875082U JPH0514521Y2 JP H0514521 Y2 JPH0514521 Y2 JP H0514521Y2 JP 1982188750 U JP1982188750 U JP 1982188750U JP 18875082 U JP18875082 U JP 18875082U JP H0514521 Y2 JPH0514521 Y2 JP H0514521Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- insulating layer
- gate line
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18875082U JPS5991756U (ja) | 1982-12-13 | 1982-12-13 | 液晶マトリクスパネル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18875082U JPS5991756U (ja) | 1982-12-13 | 1982-12-13 | 液晶マトリクスパネル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5991756U JPS5991756U (ja) | 1984-06-21 |
| JPH0514521Y2 true JPH0514521Y2 (de) | 1993-04-19 |
Family
ID=30407113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18875082U Granted JPS5991756U (ja) | 1982-12-13 | 1982-12-13 | 液晶マトリクスパネル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5991756U (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0693464B2 (ja) * | 1983-10-19 | 1994-11-16 | 富士通株式会社 | 絶縁ゲート型薄膜トランジスタの製造方法 |
| JPS63164A (ja) * | 1986-06-19 | 1988-01-05 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54157272A (en) * | 1978-05-31 | 1979-12-12 | Siemens Ag | Method of producing conductive path laminated crossing |
| JPS5638008A (en) * | 1979-09-06 | 1981-04-13 | Canon Inc | Display cell |
| JPS5665176A (en) * | 1979-10-31 | 1981-06-02 | Canon Kk | Display device |
| JPS5669864A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Thin-film transistor |
| JPS57153427A (en) * | 1981-03-17 | 1982-09-22 | Fujitsu Ltd | Manufacture of thin film device |
-
1982
- 1982-12-13 JP JP18875082U patent/JPS5991756U/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54157272A (en) * | 1978-05-31 | 1979-12-12 | Siemens Ag | Method of producing conductive path laminated crossing |
| JPS5638008A (en) * | 1979-09-06 | 1981-04-13 | Canon Inc | Display cell |
| JPS5665176A (en) * | 1979-10-31 | 1981-06-02 | Canon Kk | Display device |
| JPS5669864A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Thin-film transistor |
| JPS57153427A (en) * | 1981-03-17 | 1982-09-22 | Fujitsu Ltd | Manufacture of thin film device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5991756U (ja) | 1984-06-21 |
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