JPH0513359B2 - - Google Patents
Info
- Publication number
- JPH0513359B2 JPH0513359B2 JP60133420A JP13342085A JPH0513359B2 JP H0513359 B2 JPH0513359 B2 JP H0513359B2 JP 60133420 A JP60133420 A JP 60133420A JP 13342085 A JP13342085 A JP 13342085A JP H0513359 B2 JPH0513359 B2 JP H0513359B2
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- sense amplifier
- latch circuit
- memory cell
- latch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 101000575029 Bacillus subtilis (strain 168) 50S ribosomal protein L11 Proteins 0.000 description 1
- 102100035793 CD83 antigen Human genes 0.000 description 1
- 102100033029 Carbonic anhydrase-related protein 11 Human genes 0.000 description 1
- 101000946856 Homo sapiens CD83 antigen Proteins 0.000 description 1
- 101000867841 Homo sapiens Carbonic anhydrase-related protein 11 Proteins 0.000 description 1
- 101001075218 Homo sapiens Gastrokine-1 Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60133420A JPS61292292A (ja) | 1985-06-19 | 1985-06-19 | 半導体記憶装置 |
DE8585109699T DE3582376D1 (de) | 1984-08-03 | 1985-08-02 | Halbleiterspeicheranordnung. |
US06/761,709 US4764901A (en) | 1984-08-03 | 1985-08-02 | Semiconductor memory device capable of being accessed before completion of data output |
EP85109699A EP0170285B1 (en) | 1984-08-03 | 1985-08-02 | Semiconductor memory device |
KR1019860004837A KR910000385B1 (ko) | 1985-06-19 | 1986-06-18 | 반도체장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60133420A JPS61292292A (ja) | 1985-06-19 | 1985-06-19 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61292292A JPS61292292A (ja) | 1986-12-23 |
JPH0513359B2 true JPH0513359B2 (ko) | 1993-02-22 |
Family
ID=15104352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60133420A Granted JPS61292292A (ja) | 1984-08-03 | 1985-06-19 | 半導体記憶装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS61292292A (ko) |
KR (1) | KR910000385B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2685357B2 (ja) * | 1990-12-14 | 1997-12-03 | 株式会社東芝 | 半導体記憶装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55132595A (en) * | 1979-04-04 | 1980-10-15 | Nec Corp | Semiconductor circuit |
JPS5919291A (ja) * | 1982-07-21 | 1984-01-31 | Hitachi Ltd | 半導体メモリ装置 |
JPS6177194A (ja) * | 1984-07-02 | 1986-04-19 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体読み出し書込みメモリデバイス |
JPS61229299A (ja) * | 1984-07-26 | 1986-10-13 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体メモリ装置 |
-
1985
- 1985-06-19 JP JP60133420A patent/JPS61292292A/ja active Granted
-
1986
- 1986-06-18 KR KR1019860004837A patent/KR910000385B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55132595A (en) * | 1979-04-04 | 1980-10-15 | Nec Corp | Semiconductor circuit |
JPS5919291A (ja) * | 1982-07-21 | 1984-01-31 | Hitachi Ltd | 半導体メモリ装置 |
JPS6177194A (ja) * | 1984-07-02 | 1986-04-19 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体読み出し書込みメモリデバイス |
JPS61229299A (ja) * | 1984-07-26 | 1986-10-13 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体メモリ装置 |
Also Published As
Publication number | Publication date |
---|---|
KR910000385B1 (ko) | 1991-01-24 |
KR870000702A (ko) | 1987-02-20 |
JPS61292292A (ja) | 1986-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0129651B1 (en) | Dynamic semiconductor memory having sensing amplifiers | |
EP0905705B1 (en) | Space-efficient semiconductor memory having hierarchical column select line architecture | |
JPH041955B2 (ko) | ||
JPH06302189A (ja) | 半導体記憶装置 | |
KR950006962B1 (ko) | 반도체 기억 장치 | |
EP0791932B1 (en) | Semiconductor memory device including main/sub-bit line arrangement | |
KR930000768B1 (ko) | 반도체 기억장치 | |
JPH04184787A (ja) | ダイナミック型半導体記憶装置 | |
JPH08212776A (ja) | 半導体多ポートメモリ | |
JPH041434B2 (ko) | ||
JPH0513359B2 (ko) | ||
JPS60253096A (ja) | 半導体記憶装置 | |
JPS5856194B2 (ja) | 半導体記憶装置 | |
JP2795846B2 (ja) | 半導体装置 | |
JP2809676B2 (ja) | ダイナミック型半導体メモリ装置 | |
JPS6381692A (ja) | 半導体記憶装置 | |
JPS61126689A (ja) | 半導体記憶装置 | |
JPH0514997B2 (ko) | ||
JPS61233495A (ja) | 半導体記憶装置 | |
JPH0660657A (ja) | 半導体記憶装置 | |
JPS6235193B2 (ko) | ||
JP2634916B2 (ja) | 半導体メモリ | |
JPS63275096A (ja) | 半導体記憶装置 | |
JPH04283490A (ja) | 半導体記憶装置 | |
JPH0291884A (ja) | 半導体記憶装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |