JPH041434B2 - - Google Patents
Info
- Publication number
- JPH041434B2 JPH041434B2 JP59163508A JP16350884A JPH041434B2 JP H041434 B2 JPH041434 B2 JP H041434B2 JP 59163508 A JP59163508 A JP 59163508A JP 16350884 A JP16350884 A JP 16350884A JP H041434 B2 JPH041434 B2 JP H041434B2
- Authority
- JP
- Japan
- Prior art keywords
- sense amplifier
- bit line
- latch circuit
- circuit
- sense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 102100033029 Carbonic anhydrase-related protein 11 Human genes 0.000 description 1
- 101000867841 Homo sapiens Carbonic anhydrase-related protein 11 Proteins 0.000 description 1
- 101001075218 Homo sapiens Gastrokine-1 Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59163508A JPS6142794A (ja) | 1984-08-03 | 1984-08-03 | 半導体記憶装置のセンスアンプ系 |
KR1019850005080A KR890004475B1 (ko) | 1984-08-03 | 1985-07-16 | 반도체 장치 |
US06/761,709 US4764901A (en) | 1984-08-03 | 1985-08-02 | Semiconductor memory device capable of being accessed before completion of data output |
DE8585109699T DE3582376D1 (de) | 1984-08-03 | 1985-08-02 | Halbleiterspeicheranordnung. |
EP85109699A EP0170285B1 (en) | 1984-08-03 | 1985-08-02 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59163508A JPS6142794A (ja) | 1984-08-03 | 1984-08-03 | 半導体記憶装置のセンスアンプ系 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6142794A JPS6142794A (ja) | 1986-03-01 |
JPH041434B2 true JPH041434B2 (ko) | 1992-01-13 |
Family
ID=15775195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59163508A Granted JPS6142794A (ja) | 1984-08-03 | 1984-08-03 | 半導体記憶装置のセンスアンプ系 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS6142794A (ko) |
KR (1) | KR890004475B1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63298797A (ja) * | 1987-05-28 | 1988-12-06 | Nec Ic Microcomput Syst Ltd | 半導体メモリ |
JP2599747B2 (ja) * | 1988-03-10 | 1997-04-16 | 沖電気工業株式会社 | 半導体メモリの制御方法 |
JPH01241093A (ja) * | 1988-03-22 | 1989-09-26 | Fujitsu Ltd | 半導体記憶装置 |
JP2552009B2 (ja) * | 1989-10-27 | 1996-11-06 | 日本電気アイシーマイコンシステム株式会社 | 半導体メモリ |
JPH04119590A (ja) * | 1990-09-10 | 1992-04-21 | Fujitsu Ltd | 半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6089891A (ja) * | 1983-10-21 | 1985-05-20 | Nec Corp | 半導体メモリ |
-
1984
- 1984-08-03 JP JP59163508A patent/JPS6142794A/ja active Granted
-
1985
- 1985-07-16 KR KR1019850005080A patent/KR890004475B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6089891A (ja) * | 1983-10-21 | 1985-05-20 | Nec Corp | 半導体メモリ |
Also Published As
Publication number | Publication date |
---|---|
KR890004475B1 (ko) | 1989-11-04 |
JPS6142794A (ja) | 1986-03-01 |
KR860002156A (ko) | 1986-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |