JPH0511654B2 - - Google Patents
Info
- Publication number
- JPH0511654B2 JPH0511654B2 JP21423887A JP21423887A JPH0511654B2 JP H0511654 B2 JPH0511654 B2 JP H0511654B2 JP 21423887 A JP21423887 A JP 21423887A JP 21423887 A JP21423887 A JP 21423887A JP H0511654 B2 JPH0511654 B2 JP H0511654B2
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- predetermined shape
- ultraviolet rays
- silicon compound
- deep ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 150000003377 silicon compounds Chemical class 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21423887A JPS6457618A (en) | 1987-08-27 | 1987-08-27 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21423887A JPS6457618A (en) | 1987-08-27 | 1987-08-27 | Pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6457618A JPS6457618A (en) | 1989-03-03 |
| JPH0511654B2 true JPH0511654B2 (enrdf_load_stackoverflow) | 1993-02-16 |
Family
ID=16652471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21423887A Granted JPS6457618A (en) | 1987-08-27 | 1987-08-27 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457618A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4675450B2 (ja) * | 2000-04-13 | 2011-04-20 | 富士通株式会社 | 薄膜パターンの形成方法 |
-
1987
- 1987-08-27 JP JP21423887A patent/JPS6457618A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6457618A (en) | 1989-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |