JPS6457618A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS6457618A
JPS6457618A JP21423887A JP21423887A JPS6457618A JP S6457618 A JPS6457618 A JP S6457618A JP 21423887 A JP21423887 A JP 21423887A JP 21423887 A JP21423887 A JP 21423887A JP S6457618 A JPS6457618 A JP S6457618A
Authority
JP
Japan
Prior art keywords
etched
resist pattern
photoresist
specified shape
och3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21423887A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0511654B2 (enrdf_load_stackoverflow
Inventor
Koji Yamanaka
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21423887A priority Critical patent/JPS6457618A/ja
Publication of JPS6457618A publication Critical patent/JPS6457618A/ja
Publication of JPH0511654B2 publication Critical patent/JPH0511654B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP21423887A 1987-08-27 1987-08-27 Pattern forming method Granted JPS6457618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21423887A JPS6457618A (en) 1987-08-27 1987-08-27 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21423887A JPS6457618A (en) 1987-08-27 1987-08-27 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS6457618A true JPS6457618A (en) 1989-03-03
JPH0511654B2 JPH0511654B2 (enrdf_load_stackoverflow) 1993-02-16

Family

ID=16652471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21423887A Granted JPS6457618A (en) 1987-08-27 1987-08-27 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS6457618A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001297970A (ja) * 2000-04-13 2001-10-26 Fujitsu Ltd 薄膜パターン及びその形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001297970A (ja) * 2000-04-13 2001-10-26 Fujitsu Ltd 薄膜パターン及びその形成方法

Also Published As

Publication number Publication date
JPH0511654B2 (enrdf_load_stackoverflow) 1993-02-16

Similar Documents

Publication Publication Date Title
JPS5748237A (en) Manufacture of 2n doubling pattern
JPS53110374A (en) Manufacture of semiconductor device
JPS6457618A (en) Pattern forming method
JPS6425419A (en) Etching
JPS5321576A (en) Mask for x-ray exposure
JPS643663A (en) Forming method for fine pattern
JPS57141642A (en) Formation of pattern
JPS5726170A (en) Formation of al or al alloy pattern
JPS5545019A (en) Production of photo mask
JPS5694353A (en) Micropattern forming method
JPS6447025A (en) Etching
JPS56140345A (en) Formation of pattern
JPS5615042A (en) Manufacture of semiconductor device
JPS5711344A (en) Dry developing method
JPS57211144A (en) Formation of micropattern
JPS56108880A (en) Selectively etching method for silicon oxide film
JPS57180136A (en) Pattern formation
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS54133879A (en) Etching method
JPS5570027A (en) Manufacture of semicondcutor device
JPS56157034A (en) Usage of resist mask
JPS6432632A (en) Manufacture of semiconductor device
JPS57122530A (en) Photoetching method
JPS5397374A (en) Mask producing method
JPS577934A (en) Method for forming fine pattern

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees