JPH0492462A - 半導体装置 - Google Patents

半導体装置

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Publication number
JPH0492462A
JPH0492462A JP2208213A JP20821390A JPH0492462A JP H0492462 A JPH0492462 A JP H0492462A JP 2208213 A JP2208213 A JP 2208213A JP 20821390 A JP20821390 A JP 20821390A JP H0492462 A JPH0492462 A JP H0492462A
Authority
JP
Japan
Prior art keywords
semiconductor device
leads
power supply
lead
grounding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2208213A
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English (en)
Other versions
JP2744685B2 (ja
Inventor
Kazunari Michii
一成 道井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2208213A priority Critical patent/JP2744685B2/ja
Priority to FR9015784A priority patent/FR2665799B1/fr
Priority to US07/649,977 priority patent/US5105257A/en
Priority to DE4126043A priority patent/DE4126043C2/de
Publication of JPH0492462A publication Critical patent/JPH0492462A/ja
Application granted granted Critical
Publication of JP2744685B2 publication Critical patent/JP2744685B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、半導体装置、特に、半導体素子等を樹脂封
止する樹脂封止型の半導体装置に関するものである。
し従来の技術］ 第５図は従来の半導体装置を示す平面図であり、図にお
いて、半導体素子（１）はその周縁部に多数の電極（２
）を有し、ダイパッド（３）上に搭載されている。半導
体素子（１）の周囲には内部リード（４）が設けられて
おり、この内部リード（４）と半導体素子（１）の電極
（２）とは金属細線例えばＡｕ線（５）によって接続さ
れている。上記半導体素子（１）、内部リード（４）等
の各部材は、内部リード（４）の外端部を残して封止樹
脂で封止され、パッケージ本体（６）となる、なお、第
５図においては、封止樹脂の図示は省略しである。
従来の半導体装置は上述したように精成され、半導体装
置の動作時には、半導体素子（１）から熱が発生し、こ
の熱は内部リード（４）及びバックージ本体（６）を通
して半導体装置の外部へ拡散する。
［発明が解決しようとする課題］ 上述したような半導体装置では、内部リードく４）の数
が増加するとパッケージ本体（６）のサイズが大きくな
るため、パッケージ本体（６）内の内部リード（４）は
長くかつ細くなる。このため、接地リード及び電源リー
ドのインダクタンスが大きくなり、高速動作時にスイッ
チング雑音が発生し、誤動作が生じるという問題点があ
った。
また、ビン数が増加すると、半導体素子（１）が高集積
度化するため発熱量が大きくなるが、パッケージ本体（
６）を構成するエポキシ樹脂等は熱伝導率が低いので、
半導体素子（１）で発生した熱は効率良く外部へ放出さ
れずに半導体装置内に残ってしまう。このため、発熱量
の大きい半導体素子く１）を用いると、半導体素子（１
）が昇温しで誤動作を起こす等、半導体装置の信頼性が
低下するという問題点があった。
さらに、樹脂よりも熱伝導性が優れているセラミック材
で多層構造のパッケージ本体を形成した場合、半導体装
置の放熱性及び電気特性を向上させることはできるが、
セラミック材は著しく高価なために半導体装置の製造コ
ストが高くなるという問題点があった。
この発明は、このような問題点を解決するためになされ
たもので、電気特性及び放熱性が優れ、しかも安価な半
導体装置を得ることを目的とする。
［課題を解決するための手段］ この発明に係る半導体装置は、パッケージ本体内に、放
熱体となる幅の広い電源リード及び接地リードを設けた
ものである。
［作　用］ この発明においては、パッケージ本体内に面積の大きい
電源リードと接地リードが形成されているため、半導体
装置の電源系が低インダクタンスとなりその電気的特性
が改善されると共に、半導体素子で発生した熱は、電源
リード、接地リードに効率良く伝導して半導体装置の外
部へ放出される。
［実施例］ 第１図はこの発明の一実施例による半導体装置を示す平
面図であり、（１〉、〈２）、（５）、（６）は上述し
た従来の半導体装置におけるものと全く同一である。こ
の図において、例えばＣｕ材からなるリードフレームは
、接地リード（７）、電源り−ド（８）、信号リード（
９）及びリード（１ｏ）からなる、さらに、リードフレ
ームは２層のリードで構成されており、第１層目のリー
ドは、パッケージ本体（６）内で幅広く広がって形成さ
れた接地り−ド（７）及び電源リード（８）と、これら
接地リード（７）及び電源リード（８）の外側に形成さ
れた信号リード（９）とからなる、また、第２層目のリ
ードは、半導体素子（１）の周囲に設けられた絶縁基板
（１１）上に形成されているリード（１ｏ）である。
接地リード（７）及び電源リード（８）は、半導体素子
（１）の放熱体となるように、パッケージ本体（６）内
で幅広い形状に形成されている。また、信号リード（９
）は接地リード（７）及び電源リード（８）の外周に多
数形成されており、信号リード（９）と半導体素子（１
）の電極〈２）とは、リード（１０）及びＡｕ線（５）
により接続されている。なお、第１図では封止樹脂（６
ａ）の図示は省略しである。
第２図は第１図に示した半導体装置の側面断面図であり
、例えばポリイミドテープからなる絶縁基板（１１）上
に多数のリード（１０）が形成されている状態を示して
いる。
第３図は第１図及び第２図に示した半導体装置のリード
（１０）及び絶縁基板（１１）を示す概略斜視図であり
、第４図は同じく接地リード（７）、電源リード（８）
及び信号リード（９）を示す概略斜視図である。これら
の図において、絶縁基板（１１）上に形成されたリード
（１０）の外端部は信号リード（９）に接続されている
。また、半導体素子（１）は接地リード（７）上に搭載
されており、半導体素子（１）の電極（２）はり−ド（
１０）の内端部にＡｕ１（５）を介して接続されている
。上記の各部材は、第２図に示すように、例えばエポキ
シ樹脂からなる封止樹脂（６ａ）により封止され、信号
リード（９）の一部が露出したパッケージ本体（６）と
なる。
上述したように構成された半導体装置においては、半導
体装置の動作時に半導体素子（１）で発生した熱は、主
として熱伝導性の優れた接地リード（７）及び電源リー
ド（８）に伝導され、さらに半導体装置の外部に効率良
く伝導される。このため、消費電力の大きいすなわち発
熱量の多い半導体素子（１）を適用することが可能とな
る。また、接地リード（７）及び［源リード（８）の面
積が大きいため、電源から接地に通り抜ける半導体装置
内の電源系のインダクタンスを小さくすることができる
。
［発明の効果］ この発明は、以上説明したとおり、パッケージ本体内に
、放熱体となる幅の広い電源リード及び接地リードを設
けたので、放熱性、電気的特性に優れ、かつ安価な半導
体装置が得られるという効果を奏する。
【図面の簡単な説明】
第１図はこの発明の一実施例による半導体装置を示す平
面図、第２図は第１図に示した半導体装置の側面断面図
、第３図は第１図及び第２図に示した半導体装置のリー
ド及び絶縁基板を示す概略斜視図、第４図は第１図及び
第２図に示した半導体装置の接地リード、電源リード及
び信号リードを示す概略斜視図、第５図は従来の半導体
装置を示す平面図である。 図において、（１）は半導体素子、（２）は電極、（５
）はＡｕ線、（６）はパッケージ本体、（６ａ）は封止
樹脂、（７）は接地リード、（８）は電源リード、くっ
）は信号リード、（１０）はリード、（１１）は絶縁基
板である。 なお、各図中、同一符号は同一または相当部分を示す。

Claims (1)

  1. 【特許請求の範囲】 　パッケージ本体内で幅広く広がって形成された電源リ
    ードと、 この電源リードに隣接し、パッケージ本体内で幅広く広
    がって形成された接地リードと、 これら電源リード及び接地リードの外周に設けられた多
    数の信号リードと、 上記接地リード上に載置され、多数の電極を有する半導
    体素子と、 この半導体素子の周囲に設けられた絶縁基板と、この絶
    縁基板上に設けられ、その外端部が上記信号リードに接
    続された多数のリードと、 このリードの内端部と上記電極とを接続する金属細線と
    、 上記信号リードの一部及びその他の上記各部材を封止し
    てパッケージ本体を形成する封止樹脂とを備えたことを
    特徴とする半導体装置。
JP2208213A 1990-08-08 1990-08-08 半導体装置 Expired - Lifetime JP2744685B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2208213A JP2744685B2 (ja) 1990-08-08 1990-08-08 半導体装置
FR9015784A FR2665799B1 (fr) 1990-08-08 1990-12-17 Dispositif semi-conducteur encapsule a evacuation thermique amelioree.
US07/649,977 US5105257A (en) 1990-08-08 1991-02-04 Packaged semiconductor device and semiconductor device packaging element
DE4126043A DE4126043C2 (de) 1990-08-08 1991-08-06 Gekapseltes Halbleiterbauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2208213A JP2744685B2 (ja) 1990-08-08 1990-08-08 半導体装置

Publications (2)

Publication Number Publication Date
JPH0492462A true JPH0492462A (ja) 1992-03-25
JP2744685B2 JP2744685B2 (ja) 1998-04-28

Family

ID=16552551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2208213A Expired - Lifetime JP2744685B2 (ja) 1990-08-08 1990-08-08 半導体装置

Country Status (4)

Country Link
US (1) US5105257A (ja)
JP (1) JP2744685B2 (ja)
DE (1) DE4126043C2 (ja)
FR (1) FR2665799B1 (ja)

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Also Published As

Publication number Publication date
FR2665799B1 (fr) 1995-03-17
DE4126043C2 (de) 1998-04-09
FR2665799A1 (fr) 1992-02-14
US5105257A (en) 1992-04-14
DE4126043A1 (de) 1992-02-20
JP2744685B2 (ja) 1998-04-28

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