GB2199988B - Multi-layer molded plastic ic package - Google Patents
Multi-layer molded plastic ic packageInfo
- Publication number
- GB2199988B GB2199988B GB8800089A GB8800089A GB2199988B GB 2199988 B GB2199988 B GB 2199988B GB 8800089 A GB8800089 A GB 8800089A GB 8800089 A GB8800089 A GB 8800089A GB 2199988 B GB2199988 B GB 2199988B
- Authority
- GB
- United Kingdom
- Prior art keywords
- package
- molded plastic
- layer molded
- layer
- plastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49527—Additional leads the additional leads being a multilayer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49534—Multi-layer
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/1904—Component type
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- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US214487A | 1987-01-12 | 1987-01-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8800089D0 GB8800089D0 (en) | 1988-02-10 |
GB2199988A GB2199988A (en) | 1988-07-20 |
GB2199988B true GB2199988B (en) | 1990-04-25 |
Family
ID=21699416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8800089A Expired - Lifetime GB2199988B (en) | 1987-01-12 | 1988-01-05 | Multi-layer molded plastic ic package |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2779620B2 (en) |
GB (1) | GB2199988B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2532039B2 (en) * | 1987-05-29 | 1996-09-11 | 新光電気工業株式会社 | High frequency semiconductor device |
JPH0793406B2 (en) * | 1989-10-06 | 1995-10-09 | 株式会社三井ハイテック | Lead frame manufacturing method and semiconductor device using the same |
JPH07112039B2 (en) * | 1991-03-14 | 1995-11-29 | 日立電線株式会社 | Multi-pin multi-layer wiring lead frame |
JP2744685B2 (en) * | 1990-08-08 | 1998-04-28 | 三菱電機株式会社 | Semiconductor device |
JP2745887B2 (en) * | 1991-08-29 | 1998-04-28 | 日立電線株式会社 | Resin-sealed semiconductor device |
JPH0563130A (en) * | 1991-08-30 | 1993-03-12 | Sumitomo Special Metals Co Ltd | Lead frame and manufacture thereof, and semiconductor package |
IT1252136B (en) * | 1991-11-29 | 1995-06-05 | St Microelectronics Srl | SEMICONDUCTOR DEVICE STRUCTURE WITH METALLIC DISSIPATOR AND PLASTIC BODY, WITH MEANS FOR AN ELECTRICAL CONNECTION TO THE HIGH RELIABILITY DISSIPATOR |
EP0562629A2 (en) * | 1992-03-26 | 1993-09-29 | Sumitomo Electric Industries, Limited | Semiconductor device comprising a package |
US5629559A (en) * | 1993-04-06 | 1997-05-13 | Tokuyama Corporation | Package for semiconductor device |
JP2570584B2 (en) * | 1993-07-30 | 1997-01-08 | 日本電気株式会社 | Semiconductor device |
JP2536459B2 (en) * | 1994-09-26 | 1996-09-18 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
GB2293918A (en) * | 1994-10-06 | 1996-04-10 | Ibm | Electronic circuit packaging |
JP2811170B2 (en) * | 1996-06-28 | 1998-10-15 | 株式会社後藤製作所 | Resin-sealed semiconductor device and method of manufacturing the same |
JP2928190B2 (en) * | 1997-04-09 | 1999-08-03 | 九州日本電気株式会社 | Taping lead frame |
US6639305B2 (en) * | 2001-02-02 | 2003-10-28 | Stratedge Corporation | Single layer surface mount package |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1245710A (en) * | 1968-12-25 | 1971-09-08 | Hitachi Ltd | Case for containing a semiconductor element |
US3784883A (en) * | 1971-07-19 | 1974-01-08 | Communications Transistor Corp | Transistor package |
GB1499889A (en) * | 1974-03-06 | 1978-02-01 | Rca Corp | High frequency semiconductor device |
US4168507A (en) * | 1977-11-21 | 1979-09-18 | Motorola, Inc. | Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package |
GB2107116A (en) * | 1981-09-24 | 1983-04-20 | Junkosha Co Ltd | Temperature sensing device with high resistance connecting leads |
US4639760A (en) * | 1986-01-21 | 1987-01-27 | Motorola, Inc. | High power RF transistor assembly |
-
1988
- 1988-01-05 GB GB8800089A patent/GB2199988B/en not_active Expired - Lifetime
- 1988-01-12 JP JP63003264A patent/JP2779620B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1245710A (en) * | 1968-12-25 | 1971-09-08 | Hitachi Ltd | Case for containing a semiconductor element |
US3784883A (en) * | 1971-07-19 | 1974-01-08 | Communications Transistor Corp | Transistor package |
GB1499889A (en) * | 1974-03-06 | 1978-02-01 | Rca Corp | High frequency semiconductor device |
US4168507A (en) * | 1977-11-21 | 1979-09-18 | Motorola, Inc. | Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package |
GB2107116A (en) * | 1981-09-24 | 1983-04-20 | Junkosha Co Ltd | Temperature sensing device with high resistance connecting leads |
US4639760A (en) * | 1986-01-21 | 1987-01-27 | Motorola, Inc. | High power RF transistor assembly |
Also Published As
Publication number | Publication date |
---|---|
GB2199988A (en) | 1988-07-20 |
JPS63246851A (en) | 1988-10-13 |
JP2779620B2 (en) | 1998-07-23 |
GB8800089D0 (en) | 1988-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 20080104 |