GB8800089D0 - Multi-layer moulded plastic ic package - Google Patents

Multi-layer moulded plastic ic package

Info

Publication number
GB8800089D0
GB8800089D0 GB888800089A GB8800089A GB8800089D0 GB 8800089 D0 GB8800089 D0 GB 8800089D0 GB 888800089 A GB888800089 A GB 888800089A GB 8800089 A GB8800089 A GB 8800089A GB 8800089 D0 GB8800089 D0 GB 8800089D0
Authority
GB
United Kingdom
Prior art keywords
package
moulded plastic
layer moulded
layer
plastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB888800089A
Other versions
GB2199988B (en
GB2199988A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB8800089D0 publication Critical patent/GB8800089D0/en
Publication of GB2199988A publication Critical patent/GB2199988A/en
Application granted granted Critical
Publication of GB2199988B publication Critical patent/GB2199988B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861Lead-frames fixed on or encapsulated in insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/49527Additional leads the additional leads being a multilayer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49534Multi-layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01005Boron [B]
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    • H01L2924/01015Phosphorus [P]
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
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    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
GB8800089A 1987-01-12 1988-01-05 Multi-layer molded plastic ic package Expired - Lifetime GB2199988B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US214487A 1987-01-12 1987-01-12

Publications (3)

Publication Number Publication Date
GB8800089D0 true GB8800089D0 (en) 1988-02-10
GB2199988A GB2199988A (en) 1988-07-20
GB2199988B GB2199988B (en) 1990-04-25

Family

ID=21699416

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8800089A Expired - Lifetime GB2199988B (en) 1987-01-12 1988-01-05 Multi-layer molded plastic ic package

Country Status (2)

Country Link
JP (1) JP2779620B2 (en)
GB (1) GB2199988B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2532039B2 (en) * 1987-05-29 1996-09-11 新光電気工業株式会社 High frequency semiconductor device
JPH0793406B2 (en) * 1989-10-06 1995-10-09 株式会社三井ハイテック Lead frame manufacturing method and semiconductor device using the same
JPH07112039B2 (en) * 1991-03-14 1995-11-29 日立電線株式会社 Multi-pin multi-layer wiring lead frame
JP2744685B2 (en) * 1990-08-08 1998-04-28 三菱電機株式会社 Semiconductor device
JP2745887B2 (en) * 1991-08-29 1998-04-28 日立電線株式会社 Resin-sealed semiconductor device
JPH0563130A (en) * 1991-08-30 1993-03-12 Sumitomo Special Metals Co Ltd Lead frame and manufacture thereof, and semiconductor package
IT1252136B (en) * 1991-11-29 1995-06-05 St Microelectronics Srl SEMICONDUCTOR DEVICE STRUCTURE WITH METALLIC DISSIPATOR AND PLASTIC BODY, WITH MEANS FOR AN ELECTRICAL CONNECTION TO THE HIGH RELIABILITY DISSIPATOR
EP0562629A2 (en) * 1992-03-26 1993-09-29 Sumitomo Electric Industries, Limited Semiconductor device comprising a package
EP0645810A4 (en) * 1993-04-06 1997-04-16 Tokuyama Corp Package for semiconductor chip.
JP2570584B2 (en) * 1993-07-30 1997-01-08 日本電気株式会社 Semiconductor device
JP2536459B2 (en) * 1994-09-26 1996-09-18 日本電気株式会社 Semiconductor device and manufacturing method thereof
GB2293918A (en) * 1994-10-06 1996-04-10 Ibm Electronic circuit packaging
JP2811170B2 (en) * 1996-06-28 1998-10-15 株式会社後藤製作所 Resin-sealed semiconductor device and method of manufacturing the same
JP2928190B2 (en) * 1997-04-09 1999-08-03 九州日本電気株式会社 Taping lead frame
WO2002063684A2 (en) * 2001-02-02 2002-08-15 Stratedge Corporation Single layer surface mount package

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332233B1 (en) * 1968-12-25 1978-09-07
US3784883A (en) * 1971-07-19 1974-01-08 Communications Transistor Corp Transistor package
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns
US4168507A (en) * 1977-11-21 1979-09-18 Motorola, Inc. Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package
JPS5852534A (en) * 1981-09-24 1983-03-28 Junkosha Co Ltd Temperature detecting apparatus
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly

Also Published As

Publication number Publication date
GB2199988B (en) 1990-04-25
JPS63246851A (en) 1988-10-13
JP2779620B2 (en) 1998-07-23
GB2199988A (en) 1988-07-20

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Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20080104