JPH0483367A - 電力用半導体装置 - Google Patents

電力用半導体装置

Info

Publication number
JPH0483367A
JPH0483367A JP2196330A JP19633090A JPH0483367A JP H0483367 A JPH0483367 A JP H0483367A JP 2196330 A JP2196330 A JP 2196330A JP 19633090 A JP19633090 A JP 19633090A JP H0483367 A JPH0483367 A JP H0483367A
Authority
JP
Japan
Prior art keywords
fixed
plate
metal base
insulating substrate
ceramic insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2196330A
Other languages
English (en)
Other versions
JP2504610B2 (ja
Inventor
Junichi Nakao
中尾　淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2196330A priority Critical patent/JP2504610B2/ja
Priority to DE69123298T priority patent/DE69123298T2/de
Priority to EP91112419A priority patent/EP0468475B1/en
Priority to KR1019910012787A priority patent/KR950000203B1/ko
Priority to US07/736,230 priority patent/US5216279A/en
Publication of JPH0483367A publication Critical patent/JPH0483367A/ja
Application granted granted Critical
Publication of JP2504610B2 publication Critical patent/JP2504610B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/491—Disposition
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 、［発明の目的］ （産業上の利用分野） この発明は特にモータコントロール等に使用される、ペ
レットサイズの大きい電力用半導体装置に関する。
（従来の技術） 第４図は従来の放熱金属ベースより電極を取り出すタイ
プの電力用半導体装置の構成図である。
放熱金属ベース２１上に半導体ペレット２２をマウント
する際、金属とシリコンの熱膨張差によるペレットのク
ラック防止対策として放熱金属ベース２１とペレット２
２との間には金属板、例えばモリブデン板２３が挿入さ
れており、放熱金属ベース２１、モリブデン板２３及び
ペレット２２の相互間は例えば、はんだ２４により固着
されている。また、電極取出し部は、放熱金属ベース２
１上にメタライズセラミック２６及びＣｕ（銅）からな
る電極２７が順次はんだ２４によりマウントされている
。ペレット２２と電極２７とはアルミニウムワイヤ２８
により配線されている。
しかしなから、このような構成では、製造工程上、はん
だ付は工程数と共に部品点数が多くなるので、マウント
、ボンディング工程の自動化が困難であり、手作業によ
る組み立てラインを構成するのが現状である。
（発明が解決しようとする課題） このように、従来では製造工程上、はんだ付は工程数と
共に部品点数が多くなってしまい、マウント、ボンディ
ング工程の自動化が困難であり、手作業による組み立て
ラインにより製造コストが高いという欠点があった。
この発明は上記のような事情を考慮してなされたもので
あり、その目的は、部品点数を削減すると共に製造工程
数を削減し、組み立てラインの自動化を図ることができ
る電力用半導体装置を提供することにある。
［発明の構成］ （課題を解決するための手段） この発明の電力用半導体装置は、セラミック系絶縁基板
と、前記セラミック系絶縁基板の表面から一側面を介し
裏面に連続して巻き付くように固着された第１の導電板
と、前記第１の導電板の両側の前記セラミック系絶縁基
板の表面にそれぞれ固着された第２の導電板と、前記セ
ラミック系絶縁基板の表面における第１の導電板上に固
着された半導体ペレットと、前記半導体ペレットの電極
パッドと前記第２の導電板とを配線するボンディング用
のワイヤと、前記前記半導体ペレットが固着されていな
いセラミック系絶縁基板の裏面における第１の導電板と
固着される放熱金属ベースとから構成される。
（作　用） この発明では、半導体ペレットが固着される導電板がセ
ラミック系絶縁基板の表面から一側面を介して裏面に連
続的に存在する構成を用いることにより、製造工程数が
大幅に削減する。また、後に固着される放熱金属ベース
と半導体ペレットとの電気的接続を付属部品なしに実現
する。
（実施例） 以下、図面を参照してこの発明を実施例により説明する
。
まず、この発明の目的における製造工程における部品点
数の削減については、Ｄ　Ｂ　Ｃ（ＤｉｒｅｃｔＢｏｎ
ｄ　Ｃｏｐｐｅｒ）基板と呼ばれる、セラミック板とＣ
ｕ板を直接張り付けた基板を用いることで、大略達成さ
れる。
第３図はこの発明の前提となるＤＢＣ基板を放熱金属ベ
ースの上に固定した斜視図である。放熱金属ベース１１
は、例えばＣｕ板にニッケルメッキしたものやアルミニ
ウム板が使われる。この放熱金属ベースｌｌ上にＤＢＣ
基板１２が固定されている。
ＤＥＣ基板１２は、セラミック板１８表面上に半導体ペ
レットが固着されるＣｕ板１４、半導体ペレットの電極
となるＣｕ板１５が固定されているものである。セラミ
ック板１３とＣｕ板１４．１５とは例えば高温の酸化性
雰囲気中で固着される。図示しないが、セラミック板１
３の裏面にもＣｕ板が固着されている。
このＤＢＣ基板１２が放熱金属ベース１１上にはんだ等
で固着される。ここで、半導体ペレットが固着されるＣ
ｕ板１４と放熱金属ベース１１とは電気的に接続される
必要がある。この場合、Ｃｕ板１４と放熱金属ベース１
１とは、その間に絶縁体のセラミック板１３を介在させ
ており、このままでは半導体ペレットと放熱金属ベース
１１とは電気的に接続されない。そこで、ターミナル金
属１Ｂによるはんだ付けで、半導体ペレットが搭載され
るＣｕ板１４は放熱金属ベース１１と電気的に接続され
る構造をとっている。
しかし、このターミナル金属ＩＢの取付けが自動化を困
難にさせる原因にもなっており、量産性の向上を妨げて
いる。
そこで、この発明では上記ターミナル金属１Ｂの取付け
が不要になるようなりＢＣ基板を構成する。
第１図（ａ）、（ｂ）はそれぞれこの発明の一実施例に
係るＤＢＣ基板の構成を示す斜視図であり、（ａ）は半
導体ペレットが固着される面（表面）、（ｂ）は放熱金
属ベースが固着される面（裏面）を示している。そして
、第１図（Ｃ）は同図（ａ）もしくは（ｂ）のＡ−Ａ’
線に沿った断面図である。
半導体ペレットが固着されるＣｕ板１が、セラミック板
２の表面から一つの側面を介して裏面に巻き付くように
固着されている。セラミック板ｌの半導体ペレットが固
着される表面上において、このＣｕ板１の両側は半導体
ペレットの電極となるＣｕ板３が固着されている。セラ
ミック板２とＣｕ板１．３とは例えば高温の酸化性雰囲
気中で固着される。このようにしてＤＥＣ基板４が構成
される。
上記実施例の構成によれば、第１図（ｃ）のごとく、Ｃ
ｕ板ｌのＵ字形の溝にセラミック板２を差し込むことが
できるので、構造が簡単なうえ固定し易く、裏面への熱
伝導性も良くなるという利点が得られる。
第２図は上記ＤＥＣ基板４を用いて電力用半導体装置の
組み立てを実施した場合の構成図である。
ＤＥＣ基板４におけるＣｕ板１に半導体ペレット５がは
んだ６等によりマウントされている。ペレット５とＣｕ
板３　（電極）とはアルミニウムワイヤ７により配線さ
れている。
このようなりＥＣ基板４が放熱金属ベース８上に固着さ
れる。この場合、Ｃｕ板１は絶縁体のセラミック板２の
表面から裏面にかけて連続的に存在するので、放熱金属
ベース８とＤＢＣＥＣ基板４はんだ６等による通常の接
着のみで半導体ペレット５と放熱金属ベース８とが電気
的に接続される。
従って、上記第３図に示すようなターミナル金属１６は
不要になる。
上記実施例によれば、組み立て工程が簡素化され、組み
立てラインの自動化が可能となり、製品コストの削減を
図ることができる。
［発明の効果］ 以上説明したようにこの発明によれば、半導体ペレット
が固着されるＣｕ板かＤＢＣ基板の表面から裏面にかけ
て連続的に存在する構成を用いることにより、部品点数
を削減すると共に製造工程数を削減し、組み立てライン
の自動化を図ることができる電力用半導体装置が提供で
きる。
【図面の簡単な説明】
第１図（ａ）、（ｂ）はそれぞれこの発明の一実施例に
係るＤＥＣ基板の構成を示す斜視図、第１図（ｃ）は同
図（ａ）または（ｂ）のＡ−Ａ′線に沿った断面図、 第２図は上記第１図（ａ、）〜（ｃ）で示すＤＢＣ基板
を用いて電力用半導体装置の組み立てを実施した場合の
構成図、 第３図はこの発明の前提となるＤＥＣ基板を放熱金属ベ
ースの上に固定した斜視図、 第４図は従来の放熱金属ベースより電極を取り出すタイ
プの電力用半導体装置の構成図である。 ■、３・・・Ｃｕ板、　２・・・セラミック板、４・・
・ＤＥＣ基板、５・・・半導体ペレット、６・・・はん
だ、７・・・アルミニウムワイヤ、８・・・放熱金属ベ
ース。 出願人代理人　弁理士　鈴江武彦 第１図

Claims (1)

  1. 【特許請求の範囲】 セラミック系絶縁基板と、 前記セラミック系絶縁基板の表面から一側面を介し裏面
    に連続して巻き付くように固着された第１の導電板と、 前記第１の導電板の両側の前記セラミック系絶縁基板の
    表面にそれぞれ固着された第２の導電板と、 前記セラミック系絶縁基板の表面における第１の導電板
    上に固着された半導体ペレットと、前記半導体ペレット
    の電極パッドと前記第２の導電板とを配線するボンディ
    ング用のワイヤと、前記半導体ペレットが固着されてい
    ないセラミック系絶縁基板の裏面における第１の導電板
    と固着される放熱金属ベースと を具備したことを特徴とする電力用半導体装置。
JP2196330A 1990-07-26 1990-07-26 電力用半導体装置 Expired - Lifetime JP2504610B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2196330A JP2504610B2 (ja) 1990-07-26 1990-07-26 電力用半導体装置
DE69123298T DE69123298T2 (de) 1990-07-26 1991-07-24 Leistungshalbleiteranordnung, geeignet zur Automation der Herstellung
EP91112419A EP0468475B1 (en) 1990-07-26 1991-07-24 Power semiconductor device suitable for automation of production
KR1019910012787A KR950000203B1 (ko) 1990-07-26 1991-07-25 전력용 반도체 장치
US07/736,230 US5216279A (en) 1990-07-26 1991-07-26 Power semiconductor device suitable for automation of production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2196330A JP2504610B2 (ja) 1990-07-26 1990-07-26 電力用半導体装置

Publications (2)

Publication Number Publication Date
JPH0483367A true JPH0483367A (ja) 1992-03-17
JP2504610B2 JP2504610B2 (ja) 1996-06-05

Family

ID=16356033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2196330A Expired - Lifetime JP2504610B2 (ja) 1990-07-26 1990-07-26 電力用半導体装置

Country Status (5)

Country Link
US (1) US5216279A (ja)
EP (1) EP0468475B1 (ja)
JP (1) JP2504610B2 (ja)
KR (1) KR950000203B1 (ja)
DE (1) DE69123298T2 (ja)

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US5808358A (en) * 1994-11-10 1998-09-15 Vlt Corporation Packaging electrical circuits
US5876859A (en) * 1994-11-10 1999-03-02 Vlt Corporation Direct metal bonding
US5945130A (en) * 1994-11-15 1999-08-31 Vlt Corporation Apparatus for circuit encapsulation
US8587105B2 (en) 2011-09-21 2013-11-19 Kabushiki Kaisha Toshiba Semiconductor device

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US5798566A (en) * 1996-01-11 1998-08-25 Ngk Spark Plug Co., Ltd. Ceramic IC package base and ceramic cover
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Also Published As

Publication number Publication date
EP0468475A1 (en) 1992-01-29
KR950000203B1 (ko) 1995-01-11
EP0468475B1 (en) 1996-11-27
DE69123298T2 (de) 1997-04-24
US5216279A (en) 1993-06-01
JP2504610B2 (ja) 1996-06-05
KR920003485A (ko) 1992-02-29
DE69123298D1 (de) 1997-01-09

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