JPH0481876B2 - - Google Patents
Info
- Publication number
- JPH0481876B2 JPH0481876B2 JP59265456A JP26545684A JPH0481876B2 JP H0481876 B2 JPH0481876 B2 JP H0481876B2 JP 59265456 A JP59265456 A JP 59265456A JP 26545684 A JP26545684 A JP 26545684A JP H0481876 B2 JPH0481876 B2 JP H0481876B2
- Authority
- JP
- Japan
- Prior art keywords
- tunnel barrier
- superconductor electrode
- superconductor
- forming
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002887 superconductor Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 20
- 239000010955 niobium Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 8
- 238000000992 sputter etching Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59265456A JPS61144084A (ja) | 1984-12-18 | 1984-12-18 | ジョセフソン接合素子の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59265456A JPS61144084A (ja) | 1984-12-18 | 1984-12-18 | ジョセフソン接合素子の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61144084A JPS61144084A (ja) | 1986-07-01 |
| JPH0481876B2 true JPH0481876B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Family
ID=17417416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59265456A Granted JPS61144084A (ja) | 1984-12-18 | 1984-12-18 | ジョセフソン接合素子の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61144084A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6394692A (ja) * | 1986-10-09 | 1988-04-25 | Agency Of Ind Science & Technol | ジヨセフソン接合素子の製造方法 |
| JP6254032B2 (ja) * | 2014-03-28 | 2017-12-27 | 住友重機械工業株式会社 | Ｓｎｓ型ジョセフソン接合素子の製造方法及びｓｎｓ型ジョセフソン接合素子製造装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175830A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| US4432134A (en) * | 1982-05-10 | 1984-02-21 | Rockwell International Corporation | Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices |
-
1984
- 1984-12-18 JP JP59265456A patent/JPS61144084A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61144084A (ja) | 1986-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |