JPH0481345B2 - - Google Patents

Info

Publication number
JPH0481345B2
JPH0481345B2 JP57117302A JP11730282A JPH0481345B2 JP H0481345 B2 JPH0481345 B2 JP H0481345B2 JP 57117302 A JP57117302 A JP 57117302A JP 11730282 A JP11730282 A JP 11730282A JP H0481345 B2 JPH0481345 B2 JP H0481345B2
Authority
JP
Japan
Prior art keywords
layer
type
forming
recess
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57117302A
Other languages
English (en)
Japanese (ja)
Other versions
JPS598374A (ja
Inventor
Daisuke Ueda
Hiromitsu Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP57117302A priority Critical patent/JPS598374A/ja
Publication of JPS598374A publication Critical patent/JPS598374A/ja
Publication of JPH0481345B2 publication Critical patent/JPH0481345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57117302A 1982-07-05 1982-07-05 縦型構造電界効果トランジスタの製造方法 Granted JPS598374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57117302A JPS598374A (ja) 1982-07-05 1982-07-05 縦型構造電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57117302A JPS598374A (ja) 1982-07-05 1982-07-05 縦型構造電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS598374A JPS598374A (ja) 1984-01-17
JPH0481345B2 true JPH0481345B2 (enrdf_load_stackoverflow) 1992-12-22

Family

ID=14708384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57117302A Granted JPS598374A (ja) 1982-07-05 1982-07-05 縦型構造電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS598374A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992228A (en) * 1989-09-28 1991-02-12 The Dow Chemical Company Method for preparing preforms for molding processes
US6015737A (en) * 1991-07-26 2000-01-18 Denso Corporation Production method of a vertical type MOSFET
WO1993003502A1 (fr) * 1991-07-26 1993-02-18 Nippondenso Co., Ltd. Procede de fabrication de transistors a effet de champ mos de type vertical
US6603173B1 (en) 1991-07-26 2003-08-05 Denso Corporation Vertical type MOSFET
US5427725A (en) * 1993-05-07 1995-06-27 The Dow Chemical Company Process for resin transfer molding and preform used in the process
TW297046B (enrdf_load_stackoverflow) * 1993-06-15 1997-02-01 Dow Chemical Co
DE69534888T2 (de) * 1994-04-06 2006-11-02 Denso Corp., Kariya Herstellungsverfahren für Halbleiterbauelement mit Graben
CN1139901A (zh) * 1994-10-28 1997-01-08 陶氏化学公司 改进的树脂压铸法
JP3307785B2 (ja) * 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
US5698318A (en) * 1995-05-23 1997-12-16 The Dow Chemical Company Process for resin transfer molding and formulations useful to practice it
JP3201221B2 (ja) * 1995-07-05 2001-08-20 日本電気株式会社 半導体装置の製造方法
JP5500002B2 (ja) 2010-08-31 2014-05-21 株式会社デンソー 炭化珪素半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
JPS55133574A (en) * 1979-04-05 1980-10-17 Nec Corp Insulated gate field effect transistor
US4268952A (en) * 1979-04-09 1981-05-26 International Business Machines Corporation Method for fabricating self-aligned high resolution non planar devices employing low resolution registration

Also Published As

Publication number Publication date
JPS598374A (ja) 1984-01-17

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