JPH047594B2 - - Google Patents
Info
- Publication number
- JPH047594B2 JPH047594B2 JP26433485A JP26433485A JPH047594B2 JP H047594 B2 JPH047594 B2 JP H047594B2 JP 26433485 A JP26433485 A JP 26433485A JP 26433485 A JP26433485 A JP 26433485A JP H047594 B2 JPH047594 B2 JP H047594B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quantum well
- thickness
- band width
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000005476 size effect Effects 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26433485A JPS62123789A (ja) | 1985-11-22 | 1985-11-22 | 多重量子井戸型半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26433485A JPS62123789A (ja) | 1985-11-22 | 1985-11-22 | 多重量子井戸型半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62123789A JPS62123789A (ja) | 1987-06-05 |
| JPH047594B2 true JPH047594B2 (cs) | 1992-02-12 |
Family
ID=17401733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26433485A Granted JPS62123789A (ja) | 1985-11-22 | 1985-11-22 | 多重量子井戸型半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123789A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6392960B1 (ja) | 2017-09-12 | 2018-09-19 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
| JP2019054236A (ja) * | 2018-08-23 | 2019-04-04 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
-
1985
- 1985-11-22 JP JP26433485A patent/JPS62123789A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62123789A (ja) | 1987-06-05 |
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