JPH0472381B2 - - Google Patents
Info
- Publication number
- JPH0472381B2 JPH0472381B2 JP57226602A JP22660282A JPH0472381B2 JP H0472381 B2 JPH0472381 B2 JP H0472381B2 JP 57226602 A JP57226602 A JP 57226602A JP 22660282 A JP22660282 A JP 22660282A JP H0472381 B2 JPH0472381 B2 JP H0472381B2
- Authority
- JP
- Japan
- Prior art keywords
- recess
- gate electrode
- insulating film
- layer
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- -1 gallium arsenide (GaAs) compound Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22660282A JPS59119765A (ja) | 1982-12-27 | 1982-12-27 | 電界効果型半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22660282A JPS59119765A (ja) | 1982-12-27 | 1982-12-27 | 電界効果型半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59119765A JPS59119765A (ja) | 1984-07-11 |
JPH0472381B2 true JPH0472381B2 (ko) | 1992-11-18 |
Family
ID=16847763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22660282A Granted JPS59119765A (ja) | 1982-12-27 | 1982-12-27 | 電界効果型半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59119765A (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4700462A (en) * | 1986-10-08 | 1987-10-20 | Hughes Aircraft Company | Process for making a T-gated transistor |
JPH01274477A (ja) * | 1988-04-26 | 1989-11-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0265141A (ja) * | 1988-08-30 | 1990-03-05 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2550412B2 (ja) * | 1989-05-15 | 1996-11-06 | ローム株式会社 | 電界効果トランジスタの製造方法 |
JP2667250B2 (ja) * | 1989-06-15 | 1997-10-27 | 松下電子工業株式会社 | 半導体装置の製造方法 |
KR920007357B1 (ko) * | 1990-03-12 | 1992-08-31 | 재단법인 한국전자통신연구소 | 내열성 게이트를 이용한 갈륨비소 반도체 소자의 제조방법 |
JP2655488B2 (ja) * | 1994-09-29 | 1997-09-17 | 日本電気株式会社 | 半導体装置の製造方法 |
JP4752163B2 (ja) * | 2001-09-21 | 2011-08-17 | 日立電線株式会社 | 電界効果トランジスタの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58194373A (ja) * | 1982-05-10 | 1983-11-12 | Nec Corp | 半導体装置の製造方法 |
-
1982
- 1982-12-27 JP JP22660282A patent/JPS59119765A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58194373A (ja) * | 1982-05-10 | 1983-11-12 | Nec Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS59119765A (ja) | 1984-07-11 |
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