JPH0468789B2 - - Google Patents

Info

Publication number
JPH0468789B2
JPH0468789B2 JP57008175A JP817582A JPH0468789B2 JP H0468789 B2 JPH0468789 B2 JP H0468789B2 JP 57008175 A JP57008175 A JP 57008175A JP 817582 A JP817582 A JP 817582A JP H0468789 B2 JPH0468789 B2 JP H0468789B2
Authority
JP
Japan
Prior art keywords
well
output amplifier
charge
ccd
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008175A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125872A (ja
Inventor
Hidetsugu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008175A priority Critical patent/JPS58125872A/ja
Publication of JPS58125872A publication Critical patent/JPS58125872A/ja
Publication of JPH0468789B2 publication Critical patent/JPH0468789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57008175A 1982-01-21 1982-01-21 電荷結合素子 Granted JPS58125872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008175A JPS58125872A (ja) 1982-01-21 1982-01-21 電荷結合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008175A JPS58125872A (ja) 1982-01-21 1982-01-21 電荷結合素子

Publications (2)

Publication Number Publication Date
JPS58125872A JPS58125872A (ja) 1983-07-27
JPH0468789B2 true JPH0468789B2 (en, 2012) 1992-11-04

Family

ID=11685979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008175A Granted JPS58125872A (ja) 1982-01-21 1982-01-21 電荷結合素子

Country Status (1)

Country Link
JP (1) JPS58125872A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163761U (ja) * 1984-04-05 1985-10-30 ソニー株式会社 電荷結合素子
JPH05315587A (ja) * 1992-04-02 1993-11-26 Nec Corp 半導体装置
JP2832136B2 (ja) * 1992-12-28 1998-12-02 シャープ株式会社 固体撮像装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605108B2 (ja) * 1977-08-01 1985-02-08 株式会社日立製作所 固体擦像装置
JPS54107278A (en) * 1978-02-10 1979-08-22 Hitachi Ltd Semiconductor device
CA1151295A (en) * 1979-07-31 1983-08-02 Alan Aitken Dual resistivity mos devices and method of fabrication
JPS56167361A (en) * 1980-05-26 1981-12-23 Mitsubishi Electric Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS58125872A (ja) 1983-07-27

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