JPH0468623B2 - - Google Patents

Info

Publication number
JPH0468623B2
JPH0468623B2 JP60285903A JP28590385A JPH0468623B2 JP H0468623 B2 JPH0468623 B2 JP H0468623B2 JP 60285903 A JP60285903 A JP 60285903A JP 28590385 A JP28590385 A JP 28590385A JP H0468623 B2 JPH0468623 B2 JP H0468623B2
Authority
JP
Japan
Prior art keywords
layer
photoresist
thickness
resolution
photoresist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60285903A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61180242A (ja
Inventor
Furederitsuku Gurifuingu Buruusu
Richaado Uesuto Hooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MAIKUROSAI Inc
Original Assignee
MAIKUROSAI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MAIKUROSAI Inc filed Critical MAIKUROSAI Inc
Publication of JPS61180242A publication Critical patent/JPS61180242A/ja
Publication of JPH0468623B2 publication Critical patent/JPH0468623B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/151—Matting or other surface reflectivity altering material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
JP60285903A 1984-12-20 1985-12-20 光食刻法 Granted JPS61180242A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US684395 1984-12-20
US06/684,395 US4578344A (en) 1984-12-20 1984-12-20 Photolithographic method using a two-layer photoresist and photobleachable film

Publications (2)

Publication Number Publication Date
JPS61180242A JPS61180242A (ja) 1986-08-12
JPH0468623B2 true JPH0468623B2 (enExample) 1992-11-02

Family

ID=24747864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60285903A Granted JPS61180242A (ja) 1984-12-20 1985-12-20 光食刻法

Country Status (6)

Country Link
US (1) US4578344A (enExample)
EP (1) EP0187295B1 (enExample)
JP (1) JPS61180242A (enExample)
KR (1) KR920005771B1 (enExample)
DE (1) DE3586175T2 (enExample)
MX (1) MX166143B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4623611A (en) * 1985-01-16 1986-11-18 General Electric Company Photolithographic stripping method for removing contrast enhancement layer
US4672021A (en) * 1985-06-03 1987-06-09 Fairmount Chemical Company Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder
US4816380A (en) * 1986-06-27 1989-03-28 Texas Instruments Incorporated Water soluble contrast enhancement layer method of forming resist image on semiconductor chip
IE59915B1 (en) * 1986-07-25 1994-04-20 Microsi Inc Contrast enhancement layer compositions, alkylnitrones, and use
US5002993A (en) * 1986-07-25 1991-03-26 Microsi, Inc. Contrast enhancement layer compositions, alkylnitrones, and use
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
MX170825B (es) * 1987-07-31 1993-09-20 Microsi Inc Mezclas moldeables centrifugamente utiles para formar capas mejoradoras de contraste en la region ultravioleta profunda
JP2674058B2 (ja) * 1988-02-10 1997-11-05 日本電気株式会社 パターン形成方法
JPH0253058A (ja) * 1988-08-18 1990-02-22 Matsushita Electric Ind Co Ltd パターン形成方法
CA2011927C (en) * 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
US5178978A (en) * 1990-09-06 1993-01-12 The United States Of America As Represented By The Secretary Of The Air Force Fabricating integrated optics
WO1993007629A1 (en) * 1991-10-04 1993-04-15 Motorola, Inc. Integrated deposited vertical resistor in a sequential multilayer substrate
JP2663815B2 (ja) * 1992-11-02 1997-10-15 信越化学工業株式会社 レジストパターン形成方法
US6294317B1 (en) 1999-07-14 2001-09-25 Xerox Corporation Patterned photoresist structures having features with high aspect ratios and method of forming such structures
JP2001110101A (ja) * 1999-07-30 2001-04-20 Fujitsu Ltd 記録媒体とその製造方法
DE60043974D1 (de) * 1999-12-07 2010-04-22 Du Pont Photoentfärbbare Verbindungen enthaltende, photopolymerisierbare Zusammensetzungen und ihre Verwendung in flexographischen Druckplatten
US20050079454A1 (en) * 2003-10-14 2005-04-14 Best Leroy E. Contrast enhancement materials containing non-PFOS surfactants
US7897296B2 (en) 2004-09-30 2011-03-01 General Electric Company Method for holographic storage
US20060078802A1 (en) * 2004-10-13 2006-04-13 Chan Kwok P Holographic storage medium
US7432197B2 (en) * 2006-01-27 2008-10-07 Micron Technology, Inc. Methods of patterning photoresist, and methods of forming semiconductor constructions
US7622246B2 (en) * 2006-09-22 2009-11-24 Massachusetts Institute Of Technology Contrast enhancing layers
US8158338B2 (en) 2008-07-08 2012-04-17 Massachusetts Institute Of Technology Resist sensitizer
US8323866B2 (en) * 2008-07-08 2012-12-04 Massachusetts Institute Of Technology Inorganic resist sensitizer
JP5844267B2 (ja) * 2010-09-22 2016-01-13 株式会社Adeka 染料及び着色感光性組成物
WO2013056238A2 (en) * 2011-10-14 2013-04-18 University Of Utah Research Foundation Programmable photolithography
JP2015532667A (ja) * 2012-08-31 2015-11-12 エルジー・ケム・リミテッド スチリル系化合物、前記スチリル系化合物を含む色材、これを含む感光性樹脂組成物、前記感光性樹脂組成物で製造された感光材、これを含むカラーフィルタおよび前記カラーフィルタを含むディスプレイ装置
US10095115B2 (en) 2016-09-02 2018-10-09 Globalfoundries Inc. Forming edge etch protection using dual layer of positive-negative tone resists

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925077A (en) * 1974-03-01 1975-12-09 Horizons Inc Photoresist for holography and laser recording with bleachout dyes
GB1588417A (en) * 1977-03-15 1981-04-23 Agfa Gevaert Photoresist materials
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4225661A (en) * 1978-05-10 1980-09-30 The Richardson Company Photoreactive coating compositions and photomechanical plates produced therewith
US4362809A (en) * 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4413051A (en) * 1981-05-04 1983-11-01 Dynamics Research Corporation Method for providing high resolution, highly defined, thick film patterns
IE56081B1 (en) * 1982-11-01 1991-04-10 Microsi Inc A method of producing images of enhanced contrast in photoresists
US4464458A (en) * 1982-12-30 1984-08-07 International Business Machines Corporation Process for forming resist masks utilizing O-quinone diazide and pyrene
US4535053A (en) * 1984-06-11 1985-08-13 General Electric Company Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes

Also Published As

Publication number Publication date
EP0187295A2 (en) 1986-07-16
EP0187295A3 (en) 1988-04-27
JPS61180242A (ja) 1986-08-12
KR860005259A (ko) 1986-07-21
DE3586175T2 (de) 1993-01-07
DE3586175D1 (de) 1992-07-09
US4578344A (en) 1986-03-25
KR920005771B1 (ko) 1992-07-18
EP0187295B1 (en) 1992-06-03
MX166143B (es) 1992-12-22

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Legal Events

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LAPS Cancellation because of no payment of annual fees