MX166143B - Metodo fotolitografico - Google Patents
Metodo fotolitograficoInfo
- Publication number
- MX166143B MX166143B MX001045A MX104585A MX166143B MX 166143 B MX166143 B MX 166143B MX 001045 A MX001045 A MX 001045A MX 104585 A MX104585 A MX 104585A MX 166143 B MX166143 B MX 166143B
- Authority
- MX
- Mexico
- Prior art keywords
- layer
- photoresist
- photoresist layer
- variations
- development
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 7
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
Abstract
La presente invención se refiere a un método fotolitográifco que utiliza una fotorresistencia de dos capas, que da por resultado una resolución incompleta de la capa fotorresistiva inferior, debido a las variaciones en el pérfil y espesor del patrón fotorresistivo superior, la mejora se caracteriza porque comprende; aplicar una película fotoblanqueable sobre la superficie de la capa fotorresistiva de dos capas a la imágen de luz ultravileta, reduciendo de esa manera las variaciones y el espesor de la mascarilla conformqable portátil resultante obtenida a partir del revelado de la capa fotorressistiva superior expuesta y mejorar de esa manera la resolución del relieve de fotorresistencia de imágen resultante obtenida de la exposición y revelado subsecuentes de la capa fotorresistiva inferior.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/684,395 US4578344A (en) | 1984-12-20 | 1984-12-20 | Photolithographic method using a two-layer photoresist and photobleachable film |
Publications (1)
Publication Number | Publication Date |
---|---|
MX166143B true MX166143B (es) | 1992-12-22 |
Family
ID=24747864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX001045A MX166143B (es) | 1984-12-20 | 1985-12-20 | Metodo fotolitografico |
Country Status (6)
Country | Link |
---|---|
US (1) | US4578344A (es) |
EP (1) | EP0187295B1 (es) |
JP (1) | JPS61180242A (es) |
KR (1) | KR920005771B1 (es) |
DE (1) | DE3586175T2 (es) |
MX (1) | MX166143B (es) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4623611A (en) * | 1985-01-16 | 1986-11-18 | General Electric Company | Photolithographic stripping method for removing contrast enhancement layer |
US4672021A (en) * | 1985-06-03 | 1987-06-09 | Fairmount Chemical Company | Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder |
US4816380A (en) * | 1986-06-27 | 1989-03-28 | Texas Instruments Incorporated | Water soluble contrast enhancement layer method of forming resist image on semiconductor chip |
US5002993A (en) * | 1986-07-25 | 1991-03-26 | Microsi, Inc. | Contrast enhancement layer compositions, alkylnitrones, and use |
IE59915B1 (en) * | 1986-07-25 | 1994-04-20 | Microsi Inc | Contrast enhancement layer compositions, alkylnitrones, and use |
US4863827A (en) * | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
EP0301559B1 (en) * | 1987-07-31 | 1994-05-04 | MicroSi, Inc. (a Delaware corporation) | Spin castable mixtures useful for making deep-UV contrast enhancement layers |
JP2674058B2 (ja) * | 1988-02-10 | 1997-11-05 | 日本電気株式会社 | パターン形成方法 |
JPH0253058A (ja) * | 1988-08-18 | 1990-02-22 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
CA2011927C (en) * | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Microlithographic method for producing thick, vertically-walled photoresist patterns |
US5178978A (en) * | 1990-09-06 | 1993-01-12 | The United States Of America As Represented By The Secretary Of The Air Force | Fabricating integrated optics |
WO1993007629A1 (en) * | 1991-10-04 | 1993-04-15 | Motorola, Inc. | Integrated deposited vertical resistor in a sequential multilayer substrate |
JP2663815B2 (ja) * | 1992-11-02 | 1997-10-15 | 信越化学工業株式会社 | レジストパターン形成方法 |
US6294317B1 (en) | 1999-07-14 | 2001-09-25 | Xerox Corporation | Patterned photoresist structures having features with high aspect ratios and method of forming such structures |
JP2001110101A (ja) * | 1999-07-30 | 2001-04-20 | Fujitsu Ltd | 記録媒体とその製造方法 |
EP1107063B1 (en) * | 1999-12-07 | 2010-03-10 | E.I. Du Pont De Nemours And Company | Photobleachable compounds containing photopolymerizable compositions for use in flexographic printing plates |
US20050079454A1 (en) * | 2003-10-14 | 2005-04-14 | Best Leroy E. | Contrast enhancement materials containing non-PFOS surfactants |
US7897296B2 (en) | 2004-09-30 | 2011-03-01 | General Electric Company | Method for holographic storage |
US20060078802A1 (en) * | 2004-10-13 | 2006-04-13 | Chan Kwok P | Holographic storage medium |
US7432197B2 (en) * | 2006-01-27 | 2008-10-07 | Micron Technology, Inc. | Methods of patterning photoresist, and methods of forming semiconductor constructions |
US7622246B2 (en) * | 2006-09-22 | 2009-11-24 | Massachusetts Institute Of Technology | Contrast enhancing layers |
US8158338B2 (en) | 2008-07-08 | 2012-04-17 | Massachusetts Institute Of Technology | Resist sensitizer |
US8323866B2 (en) * | 2008-07-08 | 2012-12-04 | Massachusetts Institute Of Technology | Inorganic resist sensitizer |
JP5844267B2 (ja) * | 2010-09-22 | 2016-01-13 | 株式会社Adeka | 染料及び着色感光性組成物 |
US9454086B2 (en) * | 2011-10-14 | 2016-09-27 | University Of Utah Research Foundation | Programmable photolithography |
WO2014035203A1 (ko) * | 2012-08-31 | 2014-03-06 | 주식회사 엘지화학 | 스티릴계 화합물, 상기 스티릴계 화합물을 포함하는 색재, 이를 포함하는 감광성 수지 조성물, 상기 감광성 수지 조성물로 제조된 감광재, 상기 감광재를 포함하는 컬러필터 및 상기 컬러필터를 포함하는 디스플레이 장치 |
US10095115B2 (en) | 2016-09-02 | 2018-10-09 | Globalfoundries Inc. | Forming edge etch protection using dual layer of positive-negative tone resists |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3925077A (en) * | 1974-03-01 | 1975-12-09 | Horizons Inc | Photoresist for holography and laser recording with bleachout dyes |
GB1588417A (en) * | 1977-03-15 | 1981-04-23 | Agfa Gevaert | Photoresist materials |
US4211834A (en) * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask |
US4225661A (en) * | 1978-05-10 | 1980-09-30 | The Richardson Company | Photoreactive coating compositions and photomechanical plates produced therewith |
US4362809A (en) * | 1981-03-30 | 1982-12-07 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4413051A (en) * | 1981-05-04 | 1983-11-01 | Dynamics Research Corporation | Method for providing high resolution, highly defined, thick film patterns |
IE56082B1 (en) * | 1982-11-01 | 1991-04-10 | Microsi Inc | Photobleachable compositions |
US4464458A (en) * | 1982-12-30 | 1984-08-07 | International Business Machines Corporation | Process for forming resist masks utilizing O-quinone diazide and pyrene |
US4535053A (en) * | 1984-06-11 | 1985-08-13 | General Electric Company | Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes |
-
1984
- 1984-12-20 US US06/684,395 patent/US4578344A/en not_active Expired - Lifetime
-
1985
- 1985-12-11 DE DE8585115764T patent/DE3586175T2/de not_active Expired - Fee Related
- 1985-12-11 EP EP19850115764 patent/EP0187295B1/en not_active Expired - Lifetime
- 1985-12-20 JP JP60285903A patent/JPS61180242A/ja active Granted
- 1985-12-20 MX MX001045A patent/MX166143B/es unknown
- 1985-12-20 KR KR1019850009635A patent/KR920005771B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0187295A3 (en) | 1988-04-27 |
DE3586175T2 (de) | 1993-01-07 |
KR920005771B1 (ko) | 1992-07-18 |
JPS61180242A (ja) | 1986-08-12 |
KR860005259A (ko) | 1986-07-21 |
US4578344A (en) | 1986-03-25 |
EP0187295A2 (en) | 1986-07-16 |
EP0187295B1 (en) | 1992-06-03 |
DE3586175D1 (de) | 1992-07-09 |
JPH0468623B2 (es) | 1992-11-02 |
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