JPS61180242A - 光食刻法 - Google Patents

光食刻法

Info

Publication number
JPS61180242A
JPS61180242A JP60285903A JP28590385A JPS61180242A JP S61180242 A JPS61180242 A JP S61180242A JP 60285903 A JP60285903 A JP 60285903A JP 28590385 A JP28590385 A JP 28590385A JP S61180242 A JPS61180242 A JP S61180242A
Authority
JP
Japan
Prior art keywords
photoresist
layer
photoresist layer
thickness
photobleachable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60285903A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0468623B2 (enExample
Inventor
ブルース・フレデリツク・グリフイング
ポール・リチヤード・ウエスト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS61180242A publication Critical patent/JPS61180242A/ja
Publication of JPH0468623B2 publication Critical patent/JPH0468623B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/151—Matting or other surface reflectivity altering material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
JP60285903A 1984-12-20 1985-12-20 光食刻法 Granted JPS61180242A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/684,395 US4578344A (en) 1984-12-20 1984-12-20 Photolithographic method using a two-layer photoresist and photobleachable film
US684395 1984-12-20

Publications (2)

Publication Number Publication Date
JPS61180242A true JPS61180242A (ja) 1986-08-12
JPH0468623B2 JPH0468623B2 (enExample) 1992-11-02

Family

ID=24747864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60285903A Granted JPS61180242A (ja) 1984-12-20 1985-12-20 光食刻法

Country Status (6)

Country Link
US (1) US4578344A (enExample)
EP (1) EP0187295B1 (enExample)
JP (1) JPS61180242A (enExample)
KR (1) KR920005771B1 (enExample)
DE (1) DE3586175T2 (enExample)
MX (1) MX166143B (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6352129A (ja) * 1986-07-25 1988-03-05 マイクロサイ，インコーポレイテッド コントラスト増強層用組成物、アルキルニトロン類およびそれらの用途
JPH01204044A (ja) * 1988-02-10 1989-08-16 Nec Corp パターン形成方法
JPH0250162A (ja) * 1987-07-31 1990-02-20 Huls America Inc 遠紫外線用コントラスト増強層を形成するのに有用なスピンキャスティング可能な混合物
JPH0253058A (ja) * 1988-08-18 1990-02-22 Matsushita Electric Ind Co Ltd パターン形成方法
JPH0341452A (ja) * 1989-06-02 1991-02-21 Digital Equip Corp <Dec> 厚い垂直壁を有するフォトレジストパターンを製造するためのマイクロリソグラフィ方法
JPH06148899A (ja) * 1992-11-02 1994-05-27 Shin Etsu Chem Co Ltd レジストパターン形成方法
WO2012039286A1 (ja) * 2010-09-22 2012-03-29 株式会社Adeka 染料及び着色感光性組成物
JP2015532667A (ja) * 2012-08-31 2015-11-12 エルジー・ケム・リミテッド スチリル系化合物、前記スチリル系化合物を含む色材、これを含む感光性樹脂組成物、前記感光性樹脂組成物で製造された感光材、これを含むカラーフィルタおよび前記カラーフィルタを含むディスプレイ装置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4623611A (en) * 1985-01-16 1986-11-18 General Electric Company Photolithographic stripping method for removing contrast enhancement layer
US4672021A (en) * 1985-06-03 1987-06-09 Fairmount Chemical Company Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder
US4816380A (en) * 1986-06-27 1989-03-28 Texas Instruments Incorporated Water soluble contrast enhancement layer method of forming resist image on semiconductor chip
US5002993A (en) * 1986-07-25 1991-03-26 Microsi, Inc. Contrast enhancement layer compositions, alkylnitrones, and use
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
US5178978A (en) * 1990-09-06 1993-01-12 The United States Of America As Represented By The Secretary Of The Air Force Fabricating integrated optics
WO1993007629A1 (en) * 1991-10-04 1993-04-15 Motorola, Inc. Integrated deposited vertical resistor in a sequential multilayer substrate
US6294317B1 (en) 1999-07-14 2001-09-25 Xerox Corporation Patterned photoresist structures having features with high aspect ratios and method of forming such structures
JP2001110101A (ja) * 1999-07-30 2001-04-20 Fujitsu Ltd 記録媒体とその製造方法
EP1107063B1 (en) * 1999-12-07 2010-03-10 E.I. Du Pont De Nemours And Company Photobleachable compounds containing photopolymerizable compositions for use in flexographic printing plates
US20050079454A1 (en) * 2003-10-14 2005-04-14 Best Leroy E. Contrast enhancement materials containing non-PFOS surfactants
US7897296B2 (en) 2004-09-30 2011-03-01 General Electric Company Method for holographic storage
US20060078802A1 (en) * 2004-10-13 2006-04-13 Chan Kwok P Holographic storage medium
US7432197B2 (en) * 2006-01-27 2008-10-07 Micron Technology, Inc. Methods of patterning photoresist, and methods of forming semiconductor constructions
US7622246B2 (en) * 2006-09-22 2009-11-24 Massachusetts Institute Of Technology Contrast enhancing layers
US8158338B2 (en) 2008-07-08 2012-04-17 Massachusetts Institute Of Technology Resist sensitizer
US8323866B2 (en) * 2008-07-08 2012-12-04 Massachusetts Institute Of Technology Inorganic resist sensitizer
WO2013056238A2 (en) * 2011-10-14 2013-04-18 University Of Utah Research Foundation Programmable photolithography
US10095115B2 (en) 2016-09-02 2018-10-09 Globalfoundries Inc. Forming edge etch protection using dual layer of positive-negative tone resists

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925077A (en) * 1974-03-01 1975-12-09 Horizons Inc Photoresist for holography and laser recording with bleachout dyes
GB1588417A (en) * 1977-03-15 1981-04-23 Agfa Gevaert Photoresist materials
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4225661A (en) * 1978-05-10 1980-09-30 The Richardson Company Photoreactive coating compositions and photomechanical plates produced therewith
US4362809A (en) * 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4413051A (en) * 1981-05-04 1983-11-01 Dynamics Research Corporation Method for providing high resolution, highly defined, thick film patterns
IE56083B1 (en) * 1982-11-01 1991-04-10 Microsi Inc Aryl nitrones
US4464458A (en) * 1982-12-30 1984-08-07 International Business Machines Corporation Process for forming resist masks utilizing O-quinone diazide and pyrene
US4535053A (en) * 1984-06-11 1985-08-13 General Electric Company Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6352129A (ja) * 1986-07-25 1988-03-05 マイクロサイ，インコーポレイテッド コントラスト増強層用組成物、アルキルニトロン類およびそれらの用途
JPH0250162A (ja) * 1987-07-31 1990-02-20 Huls America Inc 遠紫外線用コントラスト増強層を形成するのに有用なスピンキャスティング可能な混合物
JPH01204044A (ja) * 1988-02-10 1989-08-16 Nec Corp パターン形成方法
JPH0253058A (ja) * 1988-08-18 1990-02-22 Matsushita Electric Ind Co Ltd パターン形成方法
JPH0341452A (ja) * 1989-06-02 1991-02-21 Digital Equip Corp <Dec> 厚い垂直壁を有するフォトレジストパターンを製造するためのマイクロリソグラフィ方法
JPH06148899A (ja) * 1992-11-02 1994-05-27 Shin Etsu Chem Co Ltd レジストパターン形成方法
WO2012039286A1 (ja) * 2010-09-22 2012-03-29 株式会社Adeka 染料及び着色感光性組成物
US8664289B2 (en) 2010-09-22 2014-03-04 Adeka Corporation Dye and coloring photosensitive composition
JP5844267B2 (ja) * 2010-09-22 2016-01-13 株式会社Adeka 染料及び着色感光性組成物
JP2015532667A (ja) * 2012-08-31 2015-11-12 エルジー・ケム・リミテッド スチリル系化合物、前記スチリル系化合物を含む色材、これを含む感光性樹脂組成物、前記感光性樹脂組成物で製造された感光材、これを含むカラーフィルタおよび前記カラーフィルタを含むディスプレイ装置

Also Published As

Publication number Publication date
EP0187295B1 (en) 1992-06-03
US4578344A (en) 1986-03-25
DE3586175D1 (de) 1992-07-09
EP0187295A2 (en) 1986-07-16
KR860005259A (ko) 1986-07-21
DE3586175T2 (de) 1993-01-07
KR920005771B1 (ko) 1992-07-18
JPH0468623B2 (enExample) 1992-11-02
EP0187295A3 (en) 1988-04-27
MX166143B (es) 1992-12-22

Similar Documents

Publication Publication Date Title
JPS61180242A (ja) 光食刻法
US8846296B2 (en) Photoresist compositions
US6165682A (en) Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof
JPS61107346A (ja) フォトレジスト層中にネガ図形を形成する方法
JPH06184311A (ja) 酸感応ポリマおよびホトレジスト構造の作成方法
JPS62234148A (ja) コントラスト増強用の光脱色性層
JPH08220741A (ja) マイクロリソグラフィ構造
KR20250158951A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JPH0455494B2 (enExample)
KR940001554B1 (ko) 사진평판의 스트리핑 방법
GB2354005A (en) Organic polymer for organic anti-reflective layer and preparation thereof
JPS6313035A (ja) パタ−ン形成方法
KR950004908B1 (ko) 포토 레지스트 조성물 및 이를 이용한 패턴형성방법
CN118239975B (zh) 有机锡簇结构及其制备方法、图案化组合物、图案化方法、图案化薄膜、图案化基底和电子元器件
KR100599076B1 (ko) 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법
JPH0675377A (ja) 感光性組成物
JP3766235B2 (ja) パタン形成方法および半導体装置の製造方法
JPH0261640A (ja) 感光性組成物
JPS6364772B2 (enExample)
US20240295818A1 (en) Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same
TWI830460B (zh) 用於多色曝光之局部陰影遮罩法
TW202447357A (zh) 含金屬的光阻顯影劑組成物以及形成圖案的方法
KR20240136790A (ko) 감광성 폴리머를 포함하는 포토레지스트 조성물과 집적회로 소자의 제조 방법
TW202540773A (zh) 形成圖案的方法和光阻膜
US5173390A (en) Water soluble contrast enhancement composition and method of use

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees