JPH0465552B2 - - Google Patents
Info
- Publication number
- JPH0465552B2 JPH0465552B2 JP58113295A JP11329583A JPH0465552B2 JP H0465552 B2 JPH0465552 B2 JP H0465552B2 JP 58113295 A JP58113295 A JP 58113295A JP 11329583 A JP11329583 A JP 11329583A JP H0465552 B2 JPH0465552 B2 JP H0465552B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- resistance
- drain region
- exposed
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11329583A JPS605568A (ja) | 1983-06-23 | 1983-06-23 | 縦型絶縁ゲ−ト電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11329583A JPS605568A (ja) | 1983-06-23 | 1983-06-23 | 縦型絶縁ゲ−ト電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605568A JPS605568A (ja) | 1985-01-12 |
| JPH0465552B2 true JPH0465552B2 (ru) | 1992-10-20 |
Family
ID=14608573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11329583A Granted JPS605568A (ja) | 1983-06-23 | 1983-06-23 | 縦型絶縁ゲ−ト電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605568A (ru) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0199293B2 (en) * | 1985-04-24 | 1995-08-30 | General Electric Company | Insulated gate semiconductor device |
| DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
| JPS62109365A (ja) * | 1985-11-07 | 1987-05-20 | Fuji Electric Co Ltd | 半導体装置 |
| JPS62282465A (ja) * | 1986-03-05 | 1987-12-08 | イクシス・コーポレーション | モノリシツク半導体デバイスおよびその製造方法 |
| JP2513640B2 (ja) * | 1986-09-17 | 1996-07-03 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| JP2557367B2 (ja) * | 1987-02-26 | 1996-11-27 | 株式会社東芝 | 絶縁ゲ−ト型自己タ−ンオフサイリスタ |
| JPH0680832B2 (ja) * | 1987-09-30 | 1994-10-12 | 日本電気株式会社 | 半導体装置 |
| JP2679074B2 (ja) * | 1988-01-27 | 1997-11-19 | 富士電機株式会社 | 電界効果トランジスタ |
| JP2864629B2 (ja) * | 1990-03-05 | 1999-03-03 | 富士電機株式会社 | 伝導度変調型ｍｏｓｆｅｔ |
| JP2001077354A (ja) | 1999-08-31 | 2001-03-23 | Miyazaki Oki Electric Co Ltd | 縦型絶縁ゲート半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57120369A (en) * | 1980-12-02 | 1982-07-27 | Gen Electric | Gate enhanced rectifier |
| JPS594077A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電界効果トランジスタ |
-
1983
- 1983-06-23 JP JP11329583A patent/JPS605568A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57120369A (en) * | 1980-12-02 | 1982-07-27 | Gen Electric | Gate enhanced rectifier |
| JPS594077A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電界効果トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605568A (ja) | 1985-01-12 |
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